SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A method of manufacturing a semiconductor memory device having a structure where semiconductor devices including silicon materials and recording materials such as phase change materials or ReRAM materials are stacked, comprising:
- (1) depositing the recording materials on a semiconductor substrate;
(2) depositing a metal film to cover an entire surface of the semiconductor substrate on which the recording materials are deposited;
(3) depositing an amorphous silicon forming the semiconductor device on the metal film; and
(4) crystallizing the amorphous silicon by annealing in a short time.
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Accused Products
Abstract
The present invention can promote the large capacity, high performance and high reliability of a semiconductor memory device by realizing high-performance of both the semiconductor device and a memory device when the semiconductor memory device is manufactured by stacking a memory device such as ReRAM or the phase change memory and the semiconductor device. After a polysilicon forming a selection device is deposited in an amorphous state at a low temperature, the crystallization of the polysilicon and the activation of impurities are briefly performed with heat treatment by laser annealing. When laser annealing is performed, the recording material located below the silicon subjected to the crystallization is completely covered with a metal film or with the metal film and an insulating film, thereby making it possible to suppress a temperature increase at the time of performing the annealing and to reduce the thermal load of the recording material.
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Citations
20 Claims
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1. A method of manufacturing a semiconductor memory device having a structure where semiconductor devices including silicon materials and recording materials such as phase change materials or ReRAM materials are stacked, comprising:
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(1) depositing the recording materials on a semiconductor substrate; (2) depositing a metal film to cover an entire surface of the semiconductor substrate on which the recording materials are deposited; (3) depositing an amorphous silicon forming the semiconductor device on the metal film; and (4) crystallizing the amorphous silicon by annealing in a short time. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of manufacturing a semiconductor memory device having a structure where an array of a memory cell including silicon materials forming semiconductor devices and a recording material such as a phase change material or an ReRAM material are stacked, comprising:
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(A) depositing the recording materials on a semiconductor substrate; (B) depositing an insulating film to cover an entire surface of the semiconductor substrate on which the recording materials are deposited; (C) depositing the metal film to cover an entire surface of the insulating film; (D) depositing an amorphous silicon forming a diode on the metal film; and (E) crystallizing the amorphous silicon by annealing in a short time. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A semiconductor memory device comprising:
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an insulating film that is formed on a semiconductor substrate; a plurality of first metal lines that are formed on the insulating film; a plurality of diodes that are formed on each of the plurality of first metal lines; first electrodes that are formed on each of the plurality of diodes; recording materials such as phase change materials or ReRAM materials that are formed on the first electrodes; second electrodes that are formed on the phase change materials; and a plurality of second metal lines that are formed the second electrodes, wherein the first metal line is made of metal having thermal conductivity higher than that of the second electrode interposed between the recording material and the second metal line. - View Dependent Claims (20)
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Specification