Reverse leakage reduction and vertical height shrinking of diode with halo doping
First Claim
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1. A semiconductor diode device, comprising:
- a first conductivity type region;
a second conductivity type region, wherein the second conductivity type is different from the first conductivity type;
an intrinsic region located between the first conductivity type region and the second conductivity type region; and
a first halo region of the first conductivity type located between the second conductivity type region and the intrinsic region.
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Abstract
One embodiment of the invention provides a semiconductor diode device including a first conductivity type region, a second conductivity type region, where the second conductivity type is different from the first conductivity type, an intrinsic region located between the first conductivity type region and the second conductivity type region; a first halo region of the first conductivity type located between the second conductivity type region and the intrinsic region, and optionally a second halo region of the second conductivity type located between the first conductivity type region and the intrinsic region.
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Citations
20 Claims
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1. A semiconductor diode device, comprising:
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a first conductivity type region; a second conductivity type region, wherein the second conductivity type is different from the first conductivity type; an intrinsic region located between the first conductivity type region and the second conductivity type region; and a first halo region of the first conductivity type located between the second conductivity type region and the intrinsic region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of making a nonvolatile memory device, comprising:
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forming a first conductivity type region; forming a second conductivity type region, wherein the second conductivity type is different from the first conductivity type; forming an intrinsic region between the first conductivity type region and the second conductivity type region; and forming a first halo region of the first conductive type between the second conductivity type region and the intrinsic region. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification