RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING LIQUID ADDITIVE

• US 20090311624A1
• Filed: 08/20/2007
• Published: 12/17/2009
• Est. Priority Date: 08/28/2006
• Status: Active Grant

• Current Assignee: Nissan Chemical Industries Limited (Shin-Etsu Chemical Company Limited)
• Original Assignee: Nissan Chemical Industries Limited (Shin-Etsu Chemical Company Limited)
• Inventors: Horiguchi, Yusuke, Takei, Satoshi, Shinjo, Tetsuya
• Granted Patent: US 8,481,247 B2
• Time in Patent Office: Days
• US Class Current: 430/271.100
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: H01L 21/0271 comprising organic layers
• CPC Class Codes: H01L 21/31144 using masks

Abstract

To provide a resist underlayer film forming composition for lithography that is used in a lithography process for production of a semiconductor device. There is provided a resist underlayer film forming composition used in a lithography process for production of a semiconductor device, comprising a resin (A), a liquid additive (B) and a solvent (C). The liquid additive (B) may be an aliphatic polyether compound. The liquid additive (B) may be a polyether polyol, polyglycidyl ether or a combination thereof. Further, there is provided a method of manufacturing a semiconductor device, including the steps of forming a resist underlayer film by applying the resist underlayer film forming composition on a semiconductor substrate and by calcining the composition; forming a photoresist layer on the underlayer film; exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and developing the photoresist layer after the exposure to light.

Claims

1. A resist underlayer film forming composition used in a lithography process for production of a semiconductor device, the composition comprising:

a resin (A);

a liquid additive (B); and

a solvent (C).

2. The resist underlayer film forming composition according to claim 1, wherein the liquid additive (B) is an aliphatic polyether compound.

3. The resist underlayer film forming composition according to claim 1, wherein the liquid additive (B) is a polyether polyol, a polyglycidyl ether or a combination thereof.

4. The resist underlayer film forming composition according to claim 3, wherein the polyether polyol is a compound represented by Formula (1):

(where n represents an integer of 1 to 300;

m represents an integer of 2 to 6;

R₁ represents a hydrogen atom or an alkyl group having 1 to 10 carbon atom(s); and

R₂ represents an alkyl group having 1 to 10 carbon atom(s), an alkenyl group having 2 to 6 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, an alkylcarbonyl group having 2 to 10 carbon atoms, an alkylcarbonylamino group having 2 to 10 carbon atoms, an alkyloxyalkyl group having 2 to 10 carbon atoms, an alkylamino group having 1 to 10 carbon atom(s), an alkyldiamino group having 1 to 10 carbon atom(s) or a combination thereof and is an organic group capable of having a valence number of 2 to 6 according to the number m of polyoxyalkylene groups).

5. The resist underlayer film forming composition according to claim 3, wherein the polyglycidyl ether is a compound represented by Formula (2):

(where in represents an integer of 2 to 6;

R₂ represents the same as defined in Formula (1) and is an organic group capable of having a valence number of 2 to 6 according to the number m of glycidyl ether groups).

6. The resist underlayer film forming composition according to claim 1, further comprising a light absorbing compound (D).

7. A method of forming a resist underlayer film used in a lithography process for production of a semiconductor device, the method comprising:

applying the resist underlayer film forming composition according to claim 1 on a substrate and calcining the composition.

8. A method of manufacturing a semiconductor device, the method comprising:

forming a resist underlayer film by applying the resist underlayer film forming composition according to claim 1 on a semiconductor substrate and by calcining the composition;

forming a photoresist layer on the underlayer film;

exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and

developing the photoresist layer after the exposure to light.