CONDUCTIVE OXYNITRIDE AND METHOD FOR MANUFACTURING CONDUCTIVE OXYNITRIDE FILM

• US 20100109058A1
• Filed: 10/30/2009
• Published: 05/06/2010
• Est. Priority Date: 10/31/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: KOEZUKA, Junichi, IMOTO, Yuki, SAKATA, Junichiro, MARUYAMA, Tetsunori, ASANO, Yuji
• Granted Patent: US 8,378,393 B2
• Time in Patent Office: Days
• US Class Current: 257/288
• CPC Class Codes: C04B 2235/3284 Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
• CPC Class Codes: C04B 2235/3286 Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
• CPC Class Codes: C04B 35/58 based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides containing free binder metal C22C29/00
• CPC Class Codes: C23C 14/0057 using reactive gases other than O2, H2O, N2, NH3 or CH4
• CPC Class Codes: C23C 14/0676 Oxynitrides
• CPC Class Codes: C23C 14/5846 Reactive treatment
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.

Claims

1. A conductive oxynitride comprising:

an oxynitride containing indium, gallium, and zinc; and

hydrogen atoms.

2. The conductive oxynitride according to claim 1,

wherein composition ratios of nitrogen (N) to oxygen (O) (N/O) range from 5 atomic % to 80 atomic %.

3. A method for manufacturing a conductive oxynitride film, comprising:

depositing an oxynitride film containing indium, gallium, and zinc;

making a compound serving as a supply source of hydrogen atoms adsorb onto a surface of the oxynitride film; and

then

performing heat treatment so that hydrogen atoms are diffused into the oxynitride film.

7. The method for manufacturing a conductive oxynitride film, according to any one of claims 3,

wherein the oxynitride film containing at least indium, gallium, and zinc is deposited by sputtering a target made from an oxide containing indium, gallium, and zinc in an atmosphere containing a nitrogen gas.

4. A method for manufacturing a conductive oxynitride film, comprising:

depositing an oxynitride film containing indium, gallium, and zinc; and

performing heat treatment in an atmosphere containing a compound serving as a supply source of hydrogen atoms so that hydrogen atoms are diffused into the oxynitride film.

8. The method for manufacturing a conductive oxynitride film, according to any one of claims 4,

wherein the oxynitride film containing at least indium, gallium, and zinc is deposited by sputtering a target made from an oxide containing indium, gallium, and zinc in an atmosphere containing a nitrogen gas.

5. A method for manufacturing a conductive oxynitride film, comprising:

stacking an oxynitride film containing indium, gallium, and zinc over a film serving as a supply source of hydrogen atoms; and

performing heat treatment so that hydrogen atoms are diffused into the oxynitride film.

9. The method for manufacturing a conductive oxynitride film, according to any one of claims 5,

wherein the oxynitride film containing at least indium, gallium, and zinc is deposited by sputtering a target made from an oxide containing indium, gallium, and zinc in an atmosphere containing a nitrogen gas.

6. A method for manufacturing a conductive oxynitride film, comprising:

depositing an oxynitride film containing indium, gallium, and zinc in an atmosphere containing a compound serving as a supply source of hydrogen atoms; and

performing heat treatment.

10. The method for manufacturing a conductive oxynitride film, according to any one of claims 6,

wherein the oxynitride film containing at least indium, gallium, and zinc is deposited by sputtering a target made from an oxide containing indium, gallium, and zinc in an atmosphere containing a nitrogen gas.

11. A semiconductor device comprising:

a gate electrode;

a gate insulating film opposite to the gate electrode; and

a semiconductor film opposite to the gate electrode with the gate insulating film interposed therebetween,

wherein the semiconductor film comprises an oxynitride containing indium, gallium, and zinc and hydrogen atoms.