CONDUCTIVE OXYNITRIDE AND METHOD FOR MANUFACTURING CONDUCTIVE OXYNITRIDE FILM
First Claim
1. A conductive oxynitride comprising:
- an oxynitride containing indium, gallium, and zinc; and
hydrogen atoms.
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Accused Products
Abstract
An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.
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Citations
11 Claims
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1. A conductive oxynitride comprising:
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an oxynitride containing indium, gallium, and zinc; and hydrogen atoms. - View Dependent Claims (2)
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3. A method for manufacturing a conductive oxynitride film, comprising:
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depositing an oxynitride film containing indium, gallium, and zinc; making a compound serving as a supply source of hydrogen atoms adsorb onto a surface of the oxynitride film; and
thenperforming heat treatment so that hydrogen atoms are diffused into the oxynitride film. - View Dependent Claims (7)
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4. A method for manufacturing a conductive oxynitride film, comprising:
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depositing an oxynitride film containing indium, gallium, and zinc; and performing heat treatment in an atmosphere containing a compound serving as a supply source of hydrogen atoms so that hydrogen atoms are diffused into the oxynitride film. - View Dependent Claims (8)
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5. A method for manufacturing a conductive oxynitride film, comprising:
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stacking an oxynitride film containing indium, gallium, and zinc over a film serving as a supply source of hydrogen atoms; and performing heat treatment so that hydrogen atoms are diffused into the oxynitride film. - View Dependent Claims (9)
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6. A method for manufacturing a conductive oxynitride film, comprising:
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depositing an oxynitride film containing indium, gallium, and zinc in an atmosphere containing a compound serving as a supply source of hydrogen atoms; and performing heat treatment. - View Dependent Claims (10)
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11. A semiconductor device comprising:
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a gate electrode; a gate insulating film opposite to the gate electrode; and a semiconductor film opposite to the gate electrode with the gate insulating film interposed therebetween, wherein the semiconductor film comprises an oxynitride containing indium, gallium, and zinc and hydrogen atoms.
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Specification