High-Injection Heterojunction Bipolar Transistor
First Claim
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1. A method for manufacturing a high-injection heterojunction bipolar transistor capable of being used as a photonic device, said method comprising:
- forming a sub-collector layer on a substrate;
depositing a collector layer on top of said sub-collector layer;
depositing a base layer on top of said collector layer;
depositing a quantum well layer on top of said base layer; and
forming an emitter on top of said quantum well layer.
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Abstract
A method for manufacturing high-injection heterojunction bipolar transistor capable of being used as a photonic device is disclosed. A sub-collector layer is formed on a substrate. A collector layer is then deposited on top of the sub-collector layer. After a base layer has been deposited on top of the collector layer, a quantum well layer is deposited on top of the base layer. An emitter is subsequently formed on top of the quantum well layer.
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Citations
10 Claims
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1. A method for manufacturing a high-injection heterojunction bipolar transistor capable of being used as a photonic device, said method comprising:
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forming a sub-collector layer on a substrate; depositing a collector layer on top of said sub-collector layer; depositing a base layer on top of said collector layer; depositing a quantum well layer on top of said base layer; and forming an emitter on top of said quantum well layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A high-injection heterojunction bipolar transistor comprising:
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a collector; an emitter; a base; and at least one quantum well located between said emitter and said base. - View Dependent Claims (9, 10)
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Specification