Conduction switching circuit, conduction switching circuit block, and operating method of conduction switching circuit
First Claim
1. A conduction switching circuit, comprising:
- a first MOSFET;
a second MOSFET connected to said first MOSFET via a first node; and
a first control terminal connected to said first node;
wherein said first MOSFET and said second MOSFET are provided so as to be electrically connected in series at an ON state, andsaid first control terminal is configured to apply a voltage to said first node so that capacitance generated in said first MOSFET and said second MOSFET is decreased when said first MOSFET and said second MOSFET are an OFF state.
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Accused Products
Abstract
An object is to provide a conduction switching circuit, an operation method of a conduction switching circuit, and a conduction switching circuit block, which can prevent a leakage of a high frequency signal without insertion loss of a reactance. A conduction switching circuit includes a first MOSFET, a second MOSFET connected to the first MOSFET via a first node, and a first control terminal connected to the first node. The first MOSFET and the second MOSFET are provided so as to be electrically connected in series at ON state. The first control terminal is configured to apply a voltage to the first node so that capacitance of the first MOSFET and the second MOSFET is decreased when the first MOSFET and the second MOSFET are OFF state.
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Citations
15 Claims
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1. A conduction switching circuit, comprising:
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a first MOSFET; a second MOSFET connected to said first MOSFET via a first node; and a first control terminal connected to said first node; wherein said first MOSFET and said second MOSFET are provided so as to be electrically connected in series at an ON state, and said first control terminal is configured to apply a voltage to said first node so that capacitance generated in said first MOSFET and said second MOSFET is decreased when said first MOSFET and said second MOSFET are an OFF state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 13)
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12. An operation method of a conduction switching circuit having a first MOSFET, a second MOSFET connected to said first MOSFET via a first node, and a first control terminal connected to said first node, wherein said first MOSFET and said second MOSFET are connected in series at the ON state, comprising:
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controlling said first MOSFET and said second MOSFET to be the OFF states; applying a voltage to said first node so that parasitic capacitance generated in said first MOSFET and said second MOSFET is decreased when said first MOSFET and said second MOSFET are the OFF state.
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14. A conduction switching circuit, comprising:
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a plurality of MOSFETs provided between a fist end and a second end so as to be electrically connected in series at an ON state; and a first control terminal connected to a plurality of nodes existing between said plurality of MOSFETs; wherein said first control terminal is configured to apply a voltage to each of said plurality of nodes so that capacitance generated in said plurality of MOSFETs is decreased when said plurality of MOSFETs are OFF state, said plurality of MOSFETs include; a first MOSFET connected to said first end; a third MOSFET connected to said second end; and a plurality of second MOSFET provided between said first MOSFET and said third MOSFET, and a gate width of said first MOSFET and a gate width of said third MOSFET are larger than a gate width of each of said plurality of second MOSFETs.
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15. A conduction switching circuit, comprising:
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a plurality of MOSFETs provided between a fist end and a second end so as to be electrically connected in series at an ON state; and a first control terminal connected to a plurality of nodes existing between said plurality of MOSFETs; wherein said first control terminal is configured to apply a voltage to each of said plurality of nodes so that capacitance generated in said plurality of MOSFETs is decreased when said plurality of MOSFETs are OFF state, said plurality of MOSFETs include; a first MOSFET connected to said first end; a third MOSFET connected to said second end; and a plurality of second MOSFET provided between said first MOSFET and said third MOSFET, and threshold voltages of said first MOSFET and said third MOSFET are set so as to be different from a threshold voltage of each of said plurality of second MOSFETs.
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Specification