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BAW STRUCTURE WITH REDUCED TOPOGRAPHIC STEPS AND RELATED METHOD

  • US 20100231329A1
  • Filed: 09/12/2008
  • Published: 09/16/2010
  • Est. Priority Date: 10/18/2007
  • Status: Active Grant
First Claim
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1. A method of forming at least one tapered sidewall in a segment of a layer of material in a semiconductor die, said method comprising steps of:

  • forming a mask over said layer of material and causing said mask to have at least one tapered sidewall;

    etching said mask and said layer of material in an etch process by controlling an etch rate of said mask and an etch rate of said layer of material so as to form said segment of said layer of material having said at least one tapered sidewall.

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