LIQUID CRYSTAL DISPLAY DEVICE AND FABRICATING METHOD THEREOF
First Claim
1. A liquid crystal display device, comprising:
- first and second substrates;
a gate line on the first substrate;
a common line on the first substrate;
a common electrode on the first substrate, wherein the common electrode is connected to the common line;
a gate insulating film on the gate line, the common line, and the common electrode;
a data line on the gate insulating film, wherein the data line crosses the gate line;
a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode, and a semiconductor layer having a channel between the source electrode and the drain electrode; and
a pixel electrode connected to the drain electrode, wherein the drain electrode overlaps a portion of the pixel electrode.
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Accused Products
Abstract
Disclosed is a thin film transistor substrate for a fringe filed switching type liquid crystal display device, and a fabrication method thereof, that reduces the number of required mask processes, and thus improves fabrication efficiency. The fabrication method involves three mask processes, wherein the masks are partial transmitting masks, and the resulting photo-resist patterns have varying thicknesses. By having photo-resist layers of varying thicknesses, structures can be formed in multiple etching steps using the same photo-resist pattern by incrementally removing the photo-resist according to its thickness. The thin film transistor substrate has a common line, a common electrode, a gate line and a gate electrode formed directly on the substrate. The common electrode overlaps the pixel electrode in the pixel area.
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Citations
13 Claims
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1. A liquid crystal display device, comprising:
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first and second substrates; a gate line on the first substrate; a common line on the first substrate; a common electrode on the first substrate, wherein the common electrode is connected to the common line; a gate insulating film on the gate line, the common line, and the common electrode; a data line on the gate insulating film, wherein the data line crosses the gate line; a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode, and a semiconductor layer having a channel between the source electrode and the drain electrode; and a pixel electrode connected to the drain electrode, wherein the drain electrode overlaps a portion of the pixel electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification