ELECTRO-OPTICAL DEVICE AND THIN FILM TRANSISTOR AND METHOD FOR FORMING THE SAME
First Claim
1. A display device comprising:
- a gate electrode over a glass substrate;
a gate insulating film over the gate electrode;
a semiconductor film over the gate electrode with the gate insulating film interposed therebetween, the semiconductor film including a channel forming region;
a source region and a drain region, each comprising an N-type semiconductor film on the semiconductor film;
a source electrode on the source region;
a drain electrode on the drain region;
a passivation film over the glass substrate to cover at least the source electrode and the drain electrode, the channel forming region, a part of a surface of the source region not covered by the source electrode and a part of a surface of the drain region not covered by the drain electrode,wherein each of the source region and the drain region has a bottom surface in contact with the semiconductor film, each of the source electrode and the drain electrode has a bottom surface in contact with corresponding one of the source region and the drain region, and a distance between opposed ends of the bottom surfaces of the source electrode and the drain electrode is larger than a distance between opposed ends of the bottom surfaces of the source region and the drain region.
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Accused Products
Abstract
A semiconductor device having a pair of impurity doped second semiconductor layers, formed on a first semiconductor layer having a channel formation region therein, an outer edge of the first semiconductor film being at least partly coextensive with an outer edge of the impurity doped second semiconductor layers. The semiconductor device further includes source and drain electrodes formed on the pair of impurity doped second semiconductor layers, wherein the pair of impurity doped second semiconductor layers extend beyond inner sides edges of the source and drain electrodes so that a stepped portion is formed from an upper surface of the source and drain electrodes to a surface of the first semiconductor film.
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Citations
22 Claims
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1. A display device comprising:
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a gate electrode over a glass substrate; a gate insulating film over the gate electrode; a semiconductor film over the gate electrode with the gate insulating film interposed therebetween, the semiconductor film including a channel forming region; a source region and a drain region, each comprising an N-type semiconductor film on the semiconductor film; a source electrode on the source region; a drain electrode on the drain region; a passivation film over the glass substrate to cover at least the source electrode and the drain electrode, the channel forming region, a part of a surface of the source region not covered by the source electrode and a part of a surface of the drain region not covered by the drain electrode, wherein each of the source region and the drain region has a bottom surface in contact with the semiconductor film, each of the source electrode and the drain electrode has a bottom surface in contact with corresponding one of the source region and the drain region, and a distance between opposed ends of the bottom surfaces of the source electrode and the drain electrode is larger than a distance between opposed ends of the bottom surfaces of the source region and the drain region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device comprising:
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a gate electrode over a glass substrate; a gate insulating film on the gate electrode; a semiconductor film over the gate electrode with the gate insulating film interposed therebetween, the semiconductor film including a channel forming region; a source region and a drain region, each comprising an N-type semiconductor film on the semiconductor film; a source electrode on the source region; a drain electrode on the drain region; a passivation film over the glass substrate to cover at least the source electrode and the drain electrode, the channel forming region, a part of a surface of the source region not covered by the source electrode and a part of a surface of the drain region not covered by the drain electrode, wherein an upper portion of each of the source region and the drain region extends beyond a lower portion of each of the source electrode and the drain electrode so that a distance between the source region and the drain region is shorter than a distance between the source electrode and the drain electrode. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A display device comprising:
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a gate electrode over a glass substrate; a gate insulating film over the gate electrode; a semiconductor film over the gate electrode with the gate insulating film interposed therebetween, the semiconductor film including a channel forming region; a source region and a drain region, each comprising an N-type semiconductor film on the semiconductor film; a source electrode on the source region; a drain electrode on the drain region; a passivation film over the glass substrate to cover at least the source electrode and the drain electrode, the channel forming region, a part of a surface of the source region not covered by the source electrode and a part of a surface of the drain region not covered by the drain electrode, wherein a first portion of each of the source region and the drain region extends beyond a lower portion of each of the source electrode and the drain electrode so that a distance between the source region and the drain region is shorter than a distance between the source electrode and the drain electrode, and a thickness of the source region and the drain region in at least a part of the first portion is substantially the same as a thickness of at least a part of a second portion of each of the source region and the drain region covered by the source electrode and the drain electrode. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification