ELECTRO-OPTICAL DEVICE AND THIN FILM TRANSISTOR AND METHOD FOR FORMING THE SAME
First Claim
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1. A display device comprising:
- a gate electrode over a glass substrate;
a gate insulating film over the gate electrode;
a semiconductor film over the gate electrode with the gate insulating film interposed therebetween, the semiconductor film including a channel forming region;
a source region and a drain region, each comprising an N-type semiconductor film on the semiconductor film;
a source electrode on the source region;
a drain electrode on the drain region;
a passivation film over the glass substrate to cover at least the source electrode and the drain electrode, the channel forming region, a part of a surface of the source region not covered by the source electrode and a part of a surface of the drain region not covered by the drain electrode,wherein each of the source region and the drain region has a bottom surface in contact with the semiconductor film, each of the source electrode and the drain electrode has a bottom surface in contact with corresponding one of the source region and the drain region, and a distance between opposed ends of the bottom surfaces of the source electrode and the drain electrode is larger than a distance between opposed ends of the bottom surfaces of the source region and the drain region.
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Abstract
A semiconductor device having a pair of impurity doped second semiconductor layers, formed on a first semiconductor layer having a channel formation region therein, an outer edge of the first semiconductor film being at least partly coextensive with an outer edge of the impurity doped second semiconductor layers. The semiconductor device further includes source and drain electrodes formed on the pair of impurity doped second semiconductor layers, wherein the pair of impurity doped second semiconductor layers extend beyond inner sides edges of the source and drain electrodes so that a stepped portion is formed from an upper surface of the source and drain electrodes to a surface of the first semiconductor film.
105 Citations
22 Claims
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1. A display device comprising:
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a gate electrode over a glass substrate; a gate insulating film over the gate electrode; a semiconductor film over the gate electrode with the gate insulating film interposed therebetween, the semiconductor film including a channel forming region; a source region and a drain region, each comprising an N-type semiconductor film on the semiconductor film; a source electrode on the source region; a drain electrode on the drain region; a passivation film over the glass substrate to cover at least the source electrode and the drain electrode, the channel forming region, a part of a surface of the source region not covered by the source electrode and a part of a surface of the drain region not covered by the drain electrode, wherein each of the source region and the drain region has a bottom surface in contact with the semiconductor film, each of the source electrode and the drain electrode has a bottom surface in contact with corresponding one of the source region and the drain region, and a distance between opposed ends of the bottom surfaces of the source electrode and the drain electrode is larger than a distance between opposed ends of the bottom surfaces of the source region and the drain region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device comprising:
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a gate electrode over a glass substrate; a gate insulating film on the gate electrode; a semiconductor film over the gate electrode with the gate insulating film interposed therebetween, the semiconductor film including a channel forming region; a source region and a drain region, each comprising an N-type semiconductor film on the semiconductor film; a source electrode on the source region; a drain electrode on the drain region; a passivation film over the glass substrate to cover at least the source electrode and the drain electrode, the channel forming region, a part of a surface of the source region not covered by the source electrode and a part of a surface of the drain region not covered by the drain electrode, wherein an upper portion of each of the source region and the drain region extends beyond a lower portion of each of the source electrode and the drain electrode so that a distance between the source region and the drain region is shorter than a distance between the source electrode and the drain electrode. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A display device comprising:
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a gate electrode over a glass substrate; a gate insulating film over the gate electrode; a semiconductor film over the gate electrode with the gate insulating film interposed therebetween, the semiconductor film including a channel forming region; a source region and a drain region, each comprising an N-type semiconductor film on the semiconductor film; a source electrode on the source region; a drain electrode on the drain region; a passivation film over the glass substrate to cover at least the source electrode and the drain electrode, the channel forming region, a part of a surface of the source region not covered by the source electrode and a part of a surface of the drain region not covered by the drain electrode, wherein a first portion of each of the source region and the drain region extends beyond a lower portion of each of the source electrode and the drain electrode so that a distance between the source region and the drain region is shorter than a distance between the source electrode and the drain electrode, and a thickness of the source region and the drain region in at least a part of the first portion is substantially the same as a thickness of at least a part of a second portion of each of the source region and the drain region covered by the source electrode and the drain electrode. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsKUSUMOTO, Naoto, ZHANG, Hongyong
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Application NumberUS12/987,397Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current257/60CPC Class CodesG02F 1/13454 Drivers integrated on the a...H01L 21/02422 Non-crystalline insulating ...H01L 21/02488 Insulating materialsH01L 21/02532 Silicon, silicon germanium,...H01L 21/02675 using laser beamsH01L 21/02686 Pulsed laser beamH01L 27/1214 comprising a plurality of T...H01L 27/1229 with different crystal prop...H01L 27/1274 using crystallisation of am...H01L 29/41733 for thin film transistors w...H01L 29/66757 Lateral single gate single ...H01L 29/66765 Lateral single gate single ...H01L 29/78675 with normal-type structure,...H01L 29/78678 with inverted-type structur...
