DEVICE AND PROCESS FOR CHEMICAL VAPOR PHASE TREATMENT
First Claim
1. Device for treating substrates, comprising a chamber having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet and an upper chamber wall which is provided with a plurality of first channels which are connected to a first inlet and a plurality of second channels which are connected to a second inlet, the first and second channels opening in the chamber and being regularly distributed in the upper wall comprising a heating element which is capable of heating the upper wall and a gas discharge ring which is provided between the upper wall and the substrate support, the upper wall being electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper wall and the substrate support.
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Accused Products
Abstract
Device for treating substrates, comprising a changer having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet for carrying out a vapor phase deposition, and an upper wall of the chamber provided with a plurality of first channels connected to a first inlet and a plurality of second channels connected to a second inlet, the first and second channels opening into the chamber and being regularly distributed in the upper wall, a heating element provided above the upper wall and a gas discharge ring provided between the upper wall and the substrate support, the upper wall begin electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper wall and the substrate support.
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Citations
16 Claims
- 1. Device for treating substrates, comprising a chamber having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet and an upper chamber wall which is provided with a plurality of first channels which are connected to a first inlet and a plurality of second channels which are connected to a second inlet, the first and second channels opening in the chamber and being regularly distributed in the upper wall comprising a heating element which is capable of heating the upper wall and a gas discharge ring which is provided between the upper wall and the substrate support, the upper wall being electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper wall and the substrate support.
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16. Process for treating substrates in a chamber having controlled temperature and pressure, a substrate being supported by a support in the chamber, wherein:
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gas inlets are heated to a temperature higher than a condensation temperature, the heating being carried out by a heat-exchange fluid; gases are introduced via the inlets, the gases being introduced through an upper wall of the chamber provided under the inlets, the introduction being effected via different holes in accordance with the type of gas and extending into the chamber, the holes being regularly distributed; if it is desirable to generate a plasma, a high-frequency electrical voltage is applied to the upper wall in relation to the support.
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Specification