DEVICE AND PROCESS FOR CHEMICAL VAPOR PHASE TREATMENT

• US 20110143551A1
• Filed: 04/22/2009
• Published: 06/16/2011
• Est. Priority Date: 04/28/2008
• Status: Active Grant

• Current Assignee: Kobus SAS
• Original Assignee: Alatech Semiconductor
• Inventors: Delcarri, Jean-Luc, Borean, Christophe
• Granted Patent: US 8,967,081 B2
• Time in Patent Office: Days
• US Class Current: 438/758
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas

Abstract

Device for treating substrates, comprising a changer having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet for carrying out a vapor phase deposition, and an upper wall of the chamber provided with a plurality of first channels connected to a first inlet and a plurality of second channels connected to a second inlet, the first and second channels opening into the chamber and being regularly distributed in the upper wall, a heating element provided above the upper wall and a gas discharge ring provided between the upper wall and the substrate support, the upper wall begin electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper wall and the substrate support.

Claims

1. Device for treating substrates, comprising a chamber having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet and an upper chamber wall which is provided with a plurality of first channels which are connected to a first inlet and a plurality of second channels which are connected to a second inlet, the first and second channels opening in the chamber and being regularly distributed in the upper wall comprising a heating element which is capable of heating the upper wall and a gas discharge ring which is provided between the upper wall and the substrate support, the upper wall being electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper wall and the substrate support.

2. Device according to claim 1, wherein the heating element is provided above the upper wall in order to heat the upper wall and the inlets.

3. Device according to claim 1, wherein at least one of the inlets is connected upstream to an evaporator.

4. Device according to claim 1, comprising at least one high-frequency generator which comprises an outlet connected to the upper wall, the earth of the high-frequency generator being connected to the support of the substrate.

5. Device according to claim 1, wherein the support of the substrate comprises at least one element with controlled temperature in order to control the temperature of the substrate.

6. Device according to claim 1, wherein the upper wall comprises a plurality of pins which form the first channels.

7. Device according to claim 6, wherein the pins are force-fitted in the upper wall.

8. Device according to claim 1, wherein the gas discharge ring comprises at least a portion of electrically insulating material.

9. Device according to claim 8, wherein the ring is constructed in one piece.

10. Device according to claim 8, wherein the ring comprises an upper portion based on a ceramic material or coated with a ceramic material and a lower portion.

11. Device according to claim 1, wherein the gas discharge ring comprises at least ten openings which are in communication with the chamber and which are distributed over the circumference of the ring so that the vector range of the gas discharge rate has axial symmetry with respect to the vertical axis of the chamber and the flow of the gases is of a laminar type in the envisaged flow range.

12. Device according to claim 1, wherein the gas discharge ring, the upper wall of the chamber and the heating element are parallel.

13. Device according to claim 1, wherein the heating element comprises a heat-exchange fluid.

14. Device according to claim 1, wherein the heating element comprises an infrared lamp.

15. Device according to claim 1, wherein the heating element comprises an insulated resistor in a housing based on ceramic material.

16. Process for treating substrates in a chamber having controlled temperature and pressure, a substrate being supported by a support in the chamber, wherein:

gas inlets are heated to a temperature higher than a condensation temperature, the heating being carried out by a heat-exchange fluid;

gases are introduced via the inlets, the gases being introduced through an upper wall of the chamber provided under the inlets, the introduction being effected via different holes in accordance with the type of gas and extending into the chamber, the holes being regularly distributed;

if it is desirable to generate a plasma, a high-frequency electrical voltage is applied to the upper wall in relation to the support.