LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE PACKAGE

• US 20110175124A1
• Filed: 12/17/2010
• Published: 07/21/2011
• Est. Priority Date: 01/15/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jeong, Young Kyu, BAE, Jung Hyeok, Park, Duk Hyun, Park, Kyung Wook
• Granted Patent: US 8,368,107 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting device according to the embodiment includes a conductive support member having a step portion at an outer peripheral region thereof, a protective member for filling the step portion formed at the outer peripheral region of the conductive support member, a reflective layer over the conductive support member, and a light emitting structure over the reflective layer and the protective member.

Claims

1. A light emitting device comprising:

a support electrode including a first region and a second region formed around the first region with a thickness thinner than a thickness of the first region;

a protective member over the second region of the support electrode;

a reflective layer over the support electrode; and

a light emitting structure located over the reflective layer and the protective member, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers.

2. The light emitting device of claim 1, wherein the protective member has a thickness of 2 μ

m to 10 μ

m.

3. The light emitting device of claim 1, wherein the protective member protrudes upward from the second region.

4. The light emitting device of claim 1, wherein the support electrode is formed at a lateral side thereof with a curved surface.

5. The light emitting device of claim 1, wherein the protective member includes at least one selected from the group consisting of Si0₂, Si_xO_y, Si₃N₄, Si_xN_y, SiO_xN_y, Al₂O₂, TiO₂, ITO, AZO and ZnO.

6. The light emitting device of claim 1, wherein the support electrode includes at least one selected from the group consisting of Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, CuW and a semiconductor substrate doped with impurities.

7. The light emitting device of claim 1, further comprising an ohmic layer between the reflective layer and the light emitting structure.

8. The light emitting device of claim 7, wherein the ohmic layer includes at least one selected from the group consisting of ITO, Ni, Pt, Ir, Rh and Ag.

9. The light emitting device of claim 7, wherein the reflective layer includes at least one selected from the group consisting of Ag, Al, Pt, Pd and Cu.

10. The light emitting device of claim 1, wherein the support electrode includes a conductive support member and a bonding layer over the conductive support member.

11. The light emitting device of claim 10, wherein the bonding layer includes at least one selected from the group consisting of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag and Ta.

12. The light emitting device of claim 1, wherein an inner surface of the protective member is inclined.

13. The light emitting device of claim 11, wherein the first region of the bonding layer has a thickness greater than a thickness of the second region of the bonding layer.

14. The light emitting device of claim 1, further comprising a current blocking layer between the light emitting structure and the reflective layer.

15. A light emitting device comprising:

a conductive support member;

a reflective layer over a first region of the conductive support member;

a protective member over a second region of the conductive support member, which is positioned around the first region;

a light emitting structure located over the reflective layer and the protective member, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers,

wherein a thickness of the protective member is at least two times thicker than a thickness ranging from the active layer to the protective member.

16. The light emitting device of claim 15, wherein the thickness of the protective member is 2 μ

m to 10 μ

m.

17. The light emitting device of claim 15, wherein the first region of the conductive support member is thicker than the second region of the conductive support member and the protective member protrudes upward from the second region.

18. The light emitting device of claim 15, wherein the conductive support member is formed at a lateral side thereof with a curved surface.

19. The light emitting device of claim 15, wherein the protective member includes at least one selected from the group consisting of Si0₂, Si_xO_y, Si₃N₄, Si_xN_y, SiO_xN_y, Al₂O₃, TiO₂, ITO, AZO and ZnO.

20. The light emitting device of claim 15, wherein an inner surface of the protective member is inclined.