THERMOELECTRIC DEVICE

• US 20110314798A1
• Filed: 08/19/2011
• Published: 12/29/2011
• Est. Priority Date: 02/19/2009
• Status: Active Grant

• Current Assignee: Continental Emitec GmbH
• Original Assignee: Emitec Gesellschaft für Emissionstechnologie mbH (Continental AG)
• Inventors: LIMBECK, SIGRID, BRÜCK, ROLF
• Granted Patent: US 9,184,365 B2
• Time in Patent Office: Days
• US Class Current: 60/320
• CPC Class Codes: F01N 5/025 the device being thermoelectric generators
• CPC Class Codes: H10N 10/17 characterised by the structure or configuration of the cell or thermocouple forming the device
• CPC Class Codes: Y02T 10/12 Improving ICE efficiencies

Abstract

A thermoelectric device contains at least one module having a first carrier layer and a second carrier layer, an interspace disposed between the first carrier layer and the second carrier layer, and an electrical insulation layer disposed on each of the first carrier layer and on the second carrier layer toward the interspace. The thermoelectric device further has a plurality of p and n-doped semiconductor elements, which are arranged alternately in the interspace between the insulation layers and are alternately electrically connected to one another.

Claims

1. A thermoelectric device, comprising:

at least one module having a first carrier layer and a second carrier layer, said first carrier layer and said second carrier layer defining an interspace therebetween;

electrical insulation layers disposed on said first carrier layer and on said second carrier layer toward said interspace; and

a plurality of p and n-doped semiconductor elements, disposed alternately in said interspace between said electrical insulation layers and are alternately electrically connected to one another.

2. The thermoelectric device according to claim 1, wherein at least one of said first and second carrier layers is formed from a material containing plastic.

3. The thermoelectric device according to claim 1, wherein at least a portion of said semiconductor elements is configured in an annular fashion and is connected to said electrical insulation layers by an outer circumferential area and an inner circumferential area.

4. The thermoelectric device according to claim 1, further comprising a solder material, said p and n-doped semiconductor elements are electrically connected to one another by said solder material on said electrical insulation layers, and at least one of the following conditions is met:

said p and n-doped semiconductor elements each have current transfer areas of a same size;

said solder material has a solder thickness and a ratio of a height of said semiconductor elements to said solder thickness is greater than 5;

1; and

said solder material has an element selected from the group consisting of active solder and silver solder.

5. The thermoelectric device according to claim 1, wherein a first contact area between said first carrier layer and said semiconductor element and a second contact area between said second carrier layer and said semiconductor element via said electrical insulation layers differ in size and have a ratio of said first contact area to said second contact area of up to 1:

3.

6. The thermoelectric device according to claim 1, wherein a useful volume of said module is defined as a ratio of a sum of a volume of said semiconductor elements in said module to an encapsulated volume of said module and said useful volume is greater than 90%.

7. The thermoelectric device according to claim 1, wherein said semiconductor elements have an additional electrical insulation layer on side areas facing one another, wherein said additional electrical insulation layer is formed from a material selected from the group consisting of mica and ceramic.

8. The thermoelectric device according to claim 1, wherein a ratio of a height of said semiconductor elements to an insulation layer thickness of said electrical insulation layers is greater than 8:

1.

9. The thermoelectric device according to claim 1, wherein said first carrier layer has at least one axial compensation element which compensates for a thermal expansion of said module in an axial direction.

10. The thermoelectric device according to claim 1, wherein said at least one module has at least one axial compensation element formed by at least a plurality of said semiconductor elements disposed obliquely in an axial direction, such that a thermal expansion of said module in an axial direction is at least partly converted into a thermal expansion in a radial direction.

11. The thermoelectric device according to claim 1, wherein said at least one module in one of a number of modules, at least a plurality of said modules can be connected to one another in an axial direction.

12. A motor vehicle, comprising:

an internal combustion engine;

an exhaust gas system;

a cooling circuit; and

a plurality of thermoelectric devices each containing;

a hot side connected to said exhaust gas system;

a cold side connected to said cooling circuit;

at least one module having a first carrier layer and a second carrier layer, said first carrier layer and said second carrier layer defining an interspace therebetween;

electrical insulation layers disposed on said first carrier layer and on said second carrier layer toward said interspace;

a plurality of p and n-doped semiconductor elements, disposed alternately in said interspace between said electrical insulation layers and are alternately electrically connected to one another; and

said first carrier layer connected to the hot side and said second carrier layer connected to the cold side.