Semiconductor Device and Method of Driving Semiconductor Device
First Claim
1. A semiconductor device comprising a potential divider circuit comprising:
- a power supply line;
a selection line;
an operational amplifier circuit including a first transistor, the first transistor including a first gate, a first source and a first drain;
a first resistor and a second resistor, the first resistor and the second resistor being connected in series to the power supply line; and
a switch transistor comprising a gate, a source and a drain, the gate being electrically connected to the selection line, the source being electrically connected to a node between the first resistor and the second resistor, and the drain being electrically connected to the first gate of the first transistor of the operational amplifier circuit.
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Accused Products
Abstract
An object of the invention is to reduce the power consumption of a semiconductor device that requires a plurality of reference potentials and a method of driving the semiconductor device. Disclosed is a semiconductor device having a potential divider circuit in which a potential supplied to a power supply line is resistively divided by resistors connected in series to the power supply line so that a desired potential is output through a switch transistor electrically connected to the power supply line. A drain terminal of the switch transistor is electrically connected to a gate terminal of a transistor provided in a circuit on the output side (or to one terminal of a capacitor) to form a node. The switch transistor has an off current low enough to hold the desired voltage in the node even when the potential is no more supplied to the power supply line.
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Citations
25 Claims
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1. A semiconductor device comprising a potential divider circuit comprising:
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a power supply line; a selection line; an operational amplifier circuit including a first transistor, the first transistor including a first gate, a first source and a first drain; a first resistor and a second resistor, the first resistor and the second resistor being connected in series to the power supply line; and a switch transistor comprising a gate, a source and a drain, the gate being electrically connected to the selection line, the source being electrically connected to a node between the first resistor and the second resistor, and the drain being electrically connected to the first gate of the first transistor of the operational amplifier circuit. - View Dependent Claims (2, 5, 8, 11, 14, 17, 19)
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3. A semiconductor device comprising a potential divider circuit comprising:
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a power supply line; a selection line; a capacitor; a first resistor and a second resistor connected in series to the power supply line; and a switch transistor comprising a gate, a drain and a source, the gate being electrically connected to the selection line, the source being electrically connected to a node between the first resistor and the second resistor, and the drain being electrically connected to the capacitor. - View Dependent Claims (6, 9, 12, 15, 20)
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4. A semiconductor device comprising a potential divider circuit comprising:
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a power supply line; a first transistor;
the first transistor including a first gate;a first resistor and a second resistor, the first resistor and the second resistor being connected in series to the power supply line; and a switch transistor comprising a gate, a source and a drain, the gate being electrically connected to the source and to a node between the first resistor and the second resistor, and the drain being electrically connected to the first gate of the first transistor. - View Dependent Claims (7, 10, 13, 16, 18, 21)
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22. A method of driving a semiconductor device comprising a potential divider circuit comprising:
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a power supply line; a selection line; an operational amplifier circuit including a first transistor;
the first transistor including a first gate, a first source and a first drain;a first resistor and a second resistor, the first resistor and the second resistor being connected in series to the power supply line; and a switch transistor comprising a gate, a source and a drain, the gate being electrically connected to the selection line, the source being electrically connected to a node between the first resistor and the second resistor, and the drain being electrically connected to the first gate of the first transistor of the operational amplifier circuit to form a second node, the method comprising; dividing a potential supplied to the power supply line with the first resistor and the second resistor to obtain a wished potential; applying the wished potential to the operational amplifier circuit through the switch transistor when the switch transistor is turned on; holding the wished potential at the second node when the switch transistor is turned off; and outputting the wished potential from the operational amplifier circuit, the switch transistor being either turned on or turned off. - View Dependent Claims (24)
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23. A method of driving a semiconductor device comprising a potential divider circuit comprising:
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a power supply line; a selection line; a capacitor; a first resistor and a second resistor connected in series to the power supply line; and a switch transistor comprising a gate, a drain and a source, the gate being electrically connected to the selection line, the source being electrically connected to a node between the first resistor and the second resistor, and the drain being electrically connected to the capacitor to form a second node, the method comprising; dividing a potential supplied to the power supply line with the first resistor and the second resistor to obtain a wished potential; applying the wished potential to the capacitor through the switch transistor when the switch transistor is turned on; holding the wished potential at the second node when the switch transistor is turned off; and applying the wished potential held at the second node through the capacitor. - View Dependent Claims (25)
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Specification