Methods of Integrated Shielding into MTJ Device for MRAM
First Claim
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1. A method for protecting a magnetic tunnel junction (MTJ) device by utilizing an integrated shielding apparatus, comprising:
- forming an MTJ device on a substrate, wherein the MTJ device comprises;
a bottom electrode;
one or more pinned layers;
a barrier layer;
one or more free layers;
one or more hardmask layers; and
a top electrode;
forming a shielding layer over the top electrode, such that the shielding layer substantially surrounds a top surface of the top electrode; and
forming a metal line connection on the shielding layer.
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Abstract
Methods and apparatus for shielding a shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via.
57 Citations
30 Claims
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1. A method for protecting a magnetic tunnel junction (MTJ) device by utilizing an integrated shielding apparatus, comprising:
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forming an MTJ device on a substrate, wherein the MTJ device comprises; a bottom electrode; one or more pinned layers; a barrier layer; one or more free layers; one or more hardmask layers; and a top electrode; forming a shielding layer over the top electrode, such that the shielding layer substantially surrounds a top surface of the top electrode; and forming a metal line connection on the shielding layer. - View Dependent Claims (2, 3, 4)
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5. A non-transitory computer-readable medium, comprising instructions stored thereon that, if executed by a lithographic device, cause the lithographic device to perform at least a part of a method, comprising:
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forming a magnetic tunnel junction (MTJ) device on a substrate, wherein the MTJ device comprises; a bottom electrode; one or more pinned layers; a barrier layer; one or more free layers; one or more hardmask layers; and a top electrode; forming a shielding layer over the top electrode, such that the shielding layer substantially surrounds a top surface of the top electrode; and forming a metal line connection on the shielding layer. - View Dependent Claims (6, 7)
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8. A magnetic tunnel junction (MTJ) device protected by an integrated shielding apparatus, comprising:
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an MTJ device on a substrate, wherein the MTJ device comprises; a bottom electrode; one or more pinned layers; a barrier layer; one or more free layers; one or more hardmask layers; and a top electrode; a shielding layer over the top electrode, such that the shielding layer substantially surrounds a top surface of the top electrode; and a metal line connection on the shielding layer. - View Dependent Claims (9, 10, 11)
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12. A magnetic tunnel junction (MTJ) device protected by an integrated shielding apparatus, comprising:
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means for reducing a magnetic field intensity in a vicinity of an MTJ electrode using a shielding layer adjacent to the MTJ electrode, such that the shielding layer substantially surrounds a surface of the MTJ electrode; and a metal line connection on the shielding layer. - View Dependent Claims (13, 14, 15)
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16. A method for protecting a magnetic tunnel junction (MTJ) device by utilizing an integrated shielding apparatus comprising:
forming an MTJ device on a substrate, wherein the MTJ device comprises; a bottom electrode; one or more pinned layers; a barrier layer; one or more free layers; one or more hardmask layers; and a first top electrode layer; forming a shielding layer over the first top electrode layer, such that the shielding layer completely surrounds a top surface of the first top electrode layer; forming a second top electrode layer over the shielding layer; and forming a metal line connection on the second top electrode layer, such that the MTJ device is protected by the shielding layer from magnetic forces caused by the metal line. - View Dependent Claims (17, 18, 19)
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20. A non-transitory computer-readable medium, comprising instructions stored thereon that, if executed by a lithographic device, cause the lithographic device to perform at least a part of a method, comprising:
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forming an MTJ device on a substrate, wherein the MTJ device comprises; a bottom electrode; one or more pinned layers; a barrier layer; one or more free layers; one or more hardmask layers; and a first top electrode layer; forming a shielding layer over the first top electrode layer, such that the shielding layer completely surrounds a top surface of the first top electrode layer; forming a second top electrode layer over the shielding layer; and forming a metal line connection on the second top electrode layer, such that the MTJ device is protected by the shielding layer from magnetic forces caused by the metal line. - View Dependent Claims (21, 22)
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23. A magnetic tunnel junction (MTJ) device protected by an integrated shielding apparatus, comprising:
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an MTJ device on a substrate, wherein the MTJ device comprises; a bottom electrode; one or more pinned layers; a barrier layer; one or more free layers; one or more hardmask layers; and a first top electrode layer; a shielding layer over the first top electrode layer, such that the shielding layer completely surrounds a top surface of the first top electrode layer; a second top electrode layer over the shielding layer; and a metal line connection on the second top electrode layer, such that the MTJ device is protected by the shielding layer from magnetic forces caused by the metal line. - View Dependent Claims (24, 25, 26)
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27. A magnetic tunnel junction (MTJ) device protected by an integrated shielding apparatus, comprising:
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means for reducing a magnetic field intensity in a vicinity of a first MTJ electrode using a shielding layer over the first MTJ electrode, such that the shielding layer substantially surrounds a surface of the first MTJ electrode; a second electrode layer adjacent to the shielding layer; and a metal line coupled to the second electrode layer, such that the MTJ device is protected by the shielding layer from magnetic forces caused by the metal line. - View Dependent Claims (28, 29, 30)
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Specification