ION SENSITIVE DETECTOR
First Claim
1. An ISFET detector for determining concentration of a target ion in a fluid, the apparatus comprising:
- a semiconducting substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the substrate;
an insulating material overlying the channel region;
a gate electrode formed on the insulating material;
a reference electrode electrifiable to establish an electric field in the channel region;
an accumulator comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates a quantity of target ions responsive to concentration of the target ions in the fluid;
a layer of a conducting material on which the accumulator is formed that is separate from the gate electrode; and
a conducting element that electrically connects the layer of conducting material to the gate electrode.
1 Assignment
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Accused Products
Abstract
An ISFET detector for determining concentration of a target ion in a fluid, the apparatus comprising: a semiconducting substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the substrate; an insulating material overlying the channel region; a gate electrode formed on the insulating material; a reference electrode electrifiable to establish an electric field in the channel region; an accumulator comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates a quantity of target ions responsive to concentration of the target ions in the fluid; a layer of a conducting material on which the accumulator is formed that is separate from the gate electrode; and a conducting element that electrically connects the layer of conducting material to the gate electrode.
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Citations
11 Claims
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1. An ISFET detector for determining concentration of a target ion in a fluid, the apparatus comprising:
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a semiconducting substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the substrate; an insulating material overlying the channel region; a gate electrode formed on the insulating material; a reference electrode electrifiable to establish an electric field in the channel region; an accumulator comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates a quantity of target ions responsive to concentration of the target ions in the fluid; a layer of a conducting material on which the accumulator is formed that is separate from the gate electrode; and a conducting element that electrically connects the layer of conducting material to the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification