Barrier Layer for FinFET Channels
First Claim
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1. An integrated circuit device, comprising:
- a semiconductor body;
a FinFET fin formed on the semiconductor body;
a channel region formed in a first layer of epitaxially grown semiconductor that is part of the fin; and
an insulating layer underneath the channel region, the insulting layer being formed from oxidizing a semiconductor that previously formed part of the fin.
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Abstract
Integrated circuit devices having FinFETs with channel regions low in crystal defects and current-blocking layers underneath the channels to improve electrostatic control. Optionally, an interface control layer formed of a high bandgap semiconductor is provided between the current-blocking layer and the channel. The disclosure also provides methods of forming integrated circuit devices having these structures. The methods include forming a FinFET fin including a channel by epitaxial growth, then oxidizing a portion of the fin to form a current-blocking layer.
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Citations
21 Claims
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1. An integrated circuit device, comprising:
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a semiconductor body; a FinFET fin formed on the semiconductor body; a channel region formed in a first layer of epitaxially grown semiconductor that is part of the fin; and an insulating layer underneath the channel region, the insulting layer being formed from oxidizing a semiconductor that previously formed part of the fin. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An integrated circuit device, comprising:
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a semiconductor body; a FinFET fin formed on the semiconductor body, the FinFET including a channel that is epitaxially grown from a single crystal; and a current-blocking layer underneath the channel, the current-blocking layer being formed from oxidized semiconductor. - View Dependent Claims (15)
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16. A method of manufacturing an integrated circuit device, comprising:
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forming a FinFET fin including a channel region by epitaxial growth; and forming an insulating layer underneath the channel region by oxidizing a layer of the fin. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification