Group III Nitride Heterostructure for Optoelectronic Device
First Claim
Patent Images
1. A heterostructure comprising:
- a substrate;
an AlN buffer layer located on the substrate;
a AlxGa1-xN/Alx′
Ga1-x′
N first superlattice structure located on the buffer layer, wherein 0.6<
x≦
1, 0.1<
x′
<
0.9, and x>
x′
, and wherein each layer in the first superlattice structure has a thickness less than or equal to one hundred nanometers;
a AlyGa1-yN/Aly′
Ga1-y′
N second superlattice structure located on the first superlattice structure, wherein y′
<
x′
, 0.6<
y≦
1, 0.1<
y′
<
0.8, and y>
y′
, and wherein each layer in the second superlattice structure has a thickness less than one hundred nanometers;
an AlzGa1-zN n-type layer located on the second superlattice structure, wherein 0.1<
z<
0.85 and z<
y′
; and
an AlbGa1-bN/AlqGa1-qN active structure, wherein b-q>
0.05.
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Abstract
Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.
29 Citations
20 Claims
-
1. A heterostructure comprising:
-
a substrate; an AlN buffer layer located on the substrate; a AlxGa1-xN/Alx′
Ga1-x′
N first superlattice structure located on the buffer layer, wherein 0.6<
x≦
1, 0.1<
x′
<
0.9, and x>
x′
, and wherein each layer in the first superlattice structure has a thickness less than or equal to one hundred nanometers;a AlyGa1-yN/Aly′
Ga1-y′
N second superlattice structure located on the first superlattice structure, wherein y′
<
x′
, 0.6<
y≦
1, 0.1<
y′
<
0.8, and y>
y′
, and wherein each layer in the second superlattice structure has a thickness less than one hundred nanometers;an AlzGa1-zN n-type layer located on the second superlattice structure, wherein 0.1<
z<
0.85 and z<
y′
; andan AlbGa1-bN/AlqGa1-qN active structure, wherein b-q>
0.05. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A heterostructure comprising:
-
a substrate; a buffer layer located on the substrate, wherein the buffer layer is formed of a group III nitride material including aluminum; a grading structure located on the buffer layer, wherein the grading structure is formed of a group III nitride material having an aluminum molar fraction that decreases from an aluminum molar fraction at a bottom heterointerface to an aluminum molar fraction at a top heterointerface; a n-type layer located on the grading structure, wherein the n-type layer is formed of a group III nitride material including aluminum having a molar fraction z, and wherein 0.1<
z<
0.85;an active structure including quantum wells and barriers, wherein the quantum wells are formed of a group III nitride material including aluminum having a molar fraction q and the barriers are formed of a group III nitride material including aluminum having a molar fraction b, and wherein b-q>
0.05;an electron blocking layer located on the active structure, wherein the electron blocking layer is formed of a group III nitride material including aluminum having a molar fraction B, and wherein B is at least 1.05*b; a p-type GaN layer located on the electron blocking layer; and a graded p-type layer located between the electron blocking layer and the GaN layer, wherein the graded p-type layer has an aluminum molar fraction that decreases from B at a heterointerface between the electron blocking layer and the graded p-type layer to zero at a heterointerface between the graded p-type layer and the GaN layer. - View Dependent Claims (14, 15, 16, 17)
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-
18. A method of fabricating a device, the method comprising:
-
creating a device design for the device, wherein the creating includes configuring a n-type side of a heterostructure for the device based on an active structure in the heterostructure including quantum wells and barriers based on a target wavelength for the device, wherein the quantum wells are formed of a group III nitride material including aluminum having a molar fraction q and the barriers are formed of a group III nitride material including aluminum having a molar fraction b, and wherein b-q>
0.05, wherein the configuring includes;configuring a grading structure located between the active structure and a buffer layer of the heterostructure, wherein the grading structure is formed of a group III nitride material having an aluminum molar fraction that decreases from an aluminum molar fraction at a bottom heterointerface to an aluminum molar fraction at a top heterointerface; and configuring a n-type layer located between the grading structure and the active structure, wherein the n-type layer is formed of a group III nitride material including aluminum having a molar fraction z selected based on at least one of;
b or q; andfabricating the device according to the device design. - View Dependent Claims (19, 20)
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Specification