METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Abstract
The amount of water and hydrogen contained in an oxide semiconductor film is reduced, and oxygen is supplied sufficiently from a base film to the oxide semiconductor film in order to reduce oxygen deficiencies. A stacked base film is formed, a first heat treatment is performed, an oxide semiconductor film is formed over and in contact with the stacked base film, and a second heat treatment is performed. In the stacked base film, a first base film and a second base film are stacked in this order. The first base film is an insulating oxide film from which oxygen is released by heating. The second base film is an insulating metal oxide film. An oxygen diffusion coefficient of the second base film is smaller than that of the first base film.
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Citations
28 Claims
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1. (canceled)
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2. A method for manufacturing a semiconductor device comprising:
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forming an insulating film over a substrate; forming an insulating metal oxide film over the insulating film; after forming the insulating metal oxide film, performing a first heat treatment; after performing the first heat treatment, forming an oxide semiconductor film over the insulating metal oxide film; and after forming the oxide semiconductor film, performing a second heat treatment, wherein an oxygen diffusion coefficient of the insulating metal oxide film is smaller than that of the insulating film, and wherein the second heat treatment is performed lower than or equal to 450°
C. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device comprising:
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forming an insulating film over a substrate; forming an insulating metal oxide film over the insulating film; after forming the insulating metal oxide film, performing a first heat treatment; after performing the first heat treatment, forming an oxide semiconductor film over the insulating metal oxide film; and after forming the oxide semiconductor film, performing a second heat treatment, wherein an oxygen diffusion coefficient of the insulating metal oxide film is smaller than that of the insulating film, wherein the first heat treatment is performed higher than or equal to 250°
C. and lower than or equal to 350°
C., andwherein the second heat treatment is performed lower than or equal to 450°
C. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for manufacturing a semiconductor device comprising:
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forming an insulating film over a substrate; forming an insulating metal oxide film over the insulating film; after forming the insulating metal oxide film, performing a first heat treatment; after performing the first heat treatment, forming an oxide semiconductor film over the insulating metal oxide film; after forming the oxide semiconductor film, performing a second heat treatment; forming a gate insulating film over the oxide semiconductor film; and forming a gate electrode over the gate insulating film, wherein an oxygen diffusion coefficient of the insulating metal oxide film is smaller than that of the insulating film, wherein the first heat treatment is performed higher than or equal to 250°
C. and lower than or equal to 350°
C., andwherein the second heat treatment is performed lower than or equal to 450°
C. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28)
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Specification