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SEMICONDUCTOR DEVICES AND METHODS PROVIDING NON-LINEAR COMPENSATION OF FIELD-EFFECT TRANSISTORS

  • US 20150244358A1
  • Filed: 05/11/2015
  • Published: 08/27/2015
  • Est. Priority Date: 07/07/2012
  • Status: Active Grant
First Claim
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1. A semiconductor die comprising:

  • a semiconductor substrate;

    at least one field-effect transistor (FET) formed on the semiconductor substrate; and

    a compensation circuit connected to a respective source of each of the at least one FET, the compensation circuit configured to compensate a non-linearity effect generated by the at least one FET.

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