SEMICONDUCTOR DEVICES AND METHODS PROVIDING NON-LINEAR COMPENSATION OF FIELD-EFFECT TRANSISTORS
First Claim
Patent Images
1. A semiconductor die comprising:
- a semiconductor substrate;
at least one field-effect transistor (FET) formed on the semiconductor substrate; and
a compensation circuit connected to a respective source of each of the at least one FET, the compensation circuit configured to compensate a non-linearity effect generated by the at least one FET.
0 Assignments
0 Petitions
Accused Products
Abstract
Semiconductor devices and methods are disclosed including switch circuitry providing improved switching performance. A semiconductor die includes a semiconductor substrate, at least one field-effect transistor (FET) formed on the semiconductor substrate, and a compensation circuit connected to a respective source of each of the at least one FET, the compensation circuit configured to compensate a non-linearity effect generated by the at least one FET.
-
Citations
20 Claims
-
1. A semiconductor die comprising:
-
a semiconductor substrate; at least one field-effect transistor (FET) formed on the semiconductor substrate; and a compensation circuit connected to a respective source of each of the at least one FET, the compensation circuit configured to compensate a non-linearity effect generated by the at least one FET. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method for fabricating a semiconductor die, the method comprising:
-
providing a semiconductor substrate; forming at least one field-effect transistor (FET) on the semiconductor substrate, each of the at least one FET having a respective source, drain, gate, and body; forming a compensation circuit on the semiconductor substrate; and connecting the compensation circuit to the respective source or the respective drain of the at least one FET to thereby allow the compensation circuit to compensate a non-linearity effect generated by the at least one FET. - View Dependent Claims (12, 13, 14, 15)
-
-
16. A radio-frequency (RF) switch module comprising:
-
a packaging substrate configured to receive a plurality of components; a semiconductor die mounted on the packaging substrate, the die including at least one field-effect transistor (FET); and a compensation circuit connected to a respective source or a respective drain of each of the at least one FET, the compensation circuit configured to compensate a non-linearity effect generated by the at least one FET. - View Dependent Claims (17, 18, 19, 20)
-
Specification