NITRIDE SEMICONDUCTOR DEVICE
First Claim
1. A nitride semiconductor device having a structure wherein an active layer of a quantum well structure, which has a well layer made of a nitride semiconductor that includes in and a barrier layer made of a nitride semiconductor, is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer,wherein said active layer has L (L≧
- 2) barrier layers so that the barrier layer arranged in a position nearest to said n-type nitride semiconductor layer is denoted as barrier layer B1 and the i-th barrier layer (i=1, 2, 3, . . . L) counted from the barrier layer B1 toward said p-type nitride semiconductor layer is denoted as barrier layer Bi;
wherein a barrier layer BL (i=L) is formed between the well layer and a first p-type nitride semiconductor layer formed in said p-type nitride semiconductor layer, said first p-type nitride semiconductor layer being made of a nitride semiconductor including Al and having a larger band gap energy than said active layer,wherein the barrier layer BL is thicker than the barrier layer Bi (i≠
L)wherein a plurality of the barrier layers including the barrier layer B1 and located on the n-type nitride semiconductor layer side are doped with an n-type impurity, and a plurality of the barrier layers including the barrier layer BL and located on the p-type nitride semiconductor layer side are undoped with an n-type impurity.
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Abstract
In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.
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Citations
13 Claims
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1. A nitride semiconductor device having a structure wherein an active layer of a quantum well structure, which has a well layer made of a nitride semiconductor that includes in and a barrier layer made of a nitride semiconductor, is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer,
wherein said active layer has L (L≧ - 2) barrier layers so that the barrier layer arranged in a position nearest to said n-type nitride semiconductor layer is denoted as barrier layer B1 and the i-th barrier layer (i=1, 2, 3, . . . L) counted from the barrier layer B1 toward said p-type nitride semiconductor layer is denoted as barrier layer Bi;
wherein a barrier layer BL (i=L) is formed between the well layer and a first p-type nitride semiconductor layer formed in said p-type nitride semiconductor layer, said first p-type nitride semiconductor layer being made of a nitride semiconductor including Al and having a larger band gap energy than said active layer, wherein the barrier layer BL is thicker than the barrier layer Bi (i≠
L)wherein a plurality of the barrier layers including the barrier layer B1 and located on the n-type nitride semiconductor layer side are doped with an n-type impurity, and a plurality of the barrier layers including the barrier layer BL and located on the p-type nitride semiconductor layer side are undoped with an n-type impurity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
- 2) barrier layers so that the barrier layer arranged in a position nearest to said n-type nitride semiconductor layer is denoted as barrier layer B1 and the i-th barrier layer (i=1, 2, 3, . . . L) counted from the barrier layer B1 toward said p-type nitride semiconductor layer is denoted as barrier layer Bi;
Specification