Method of Semiconductor Integrated Circuit Fabrication
First Claim
1. A method for fabricating a semiconductor integrated circuit (IC), the method comprising:
- providing a first conductive feature and a second conductive feature on a substrate, separated by a first dielectric layer;
forming a first hard mask (HM) as a top layer on the first conductive feature;
forming a first patterned dielectric layer over the first and the second conductive features, wherein the first patterned dielectric layer has a first opening to expose the second conductive feature;
forming a first metal plug in the first opening to connect the second conductive feature;
forming a second HM as a top layer on the first metal plug;
forming a second patterned dielectric layer over the first conductive feature and the first metal plug, wherein the second patterned dielectric layer has second openings to expose the first conductive feature and a subset of the first metal plugs; and
forming second metal plugs in the second openings to connect to the first conductive feature and the subset of the first metal plugs.
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Accused Products
Abstract
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A first conductive feature and a second conductive feature are provided. A first hard mask (HM) is formed on the first conductive feature. A patterned dielectric layer is formed over the first and the second conductive features, with first openings to expose the second conductive features. A first metal plug is formed in the first opening to contact the second conductive features. A second HM is formed on the first metal plugs and another patterned dielectric layer is formed over the substrate, with second openings to expose a subset of the first metal plugs and the first conductive features. A second metal plug is formed in the second openings.
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Citations
20 Claims
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1. A method for fabricating a semiconductor integrated circuit (IC), the method comprising:
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providing a first conductive feature and a second conductive feature on a substrate, separated by a first dielectric layer; forming a first hard mask (HM) as a top layer on the first conductive feature; forming a first patterned dielectric layer over the first and the second conductive features, wherein the first patterned dielectric layer has a first opening to expose the second conductive feature; forming a first metal plug in the first opening to connect the second conductive feature; forming a second HM as a top layer on the first metal plug; forming a second patterned dielectric layer over the first conductive feature and the first metal plug, wherein the second patterned dielectric layer has second openings to expose the first conductive feature and a subset of the first metal plugs; and forming second metal plugs in the second openings to connect to the first conductive feature and the subset of the first metal plugs. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method comprising:
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receiving a substrate having a first dielectric layer disposed thereupon, a first conductive feature disposed within the first dielectric layer, a first hard mask disposed on the first conductive feature, and a second conductive feature disposed within the substrate; recessing a portion of the first dielectric layer to define a second trench that exposes the second conductive feature; forming a first plug in the second trench and electrically coupled to the second conductive feature; recessing a portion of the first plug to define a third trench; forming a second hard mask within the third trench; forming a second plug that extends through the second hard mask to electrically couple to the first plug; and forming a third plug that extends through the first hard mask to electrically couple to the first conductive feature. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A method comprising:
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receiving a substrate having disposed thereupon; a first conductive feature and a second conductive feature, wherein a top surface of the first conductive feature is above a top surface of the second conductive feature in a horizontal direction; and a first dielectric layer disposed alongside the first conductive feature and on the second conductive feature; forming a first hard mask on the first conductive feature, wherein a top surface of the first hard mask is substantially coplanar with a top surface of the first dielectric layer; forming a first trench in the first dielectric layer that exposes the second conductive feature; forming a first plug in the first trench and on the second conductive feature; forming a second hard mask on the first plug; forming a second plug that extends through the second hard mask and coupled to the first plug; and forming a third plug that extends through the first hard mask and coupled to the first conductive feature. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification