Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication
First Claim
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1. A semiconductor structure comprising:
- a substrate comprising a first crystalline semiconductor material having a top surface with a first crystal orientation, the substrate including a recess from the top surface into the substrate with a maximum depth d, the recess comprising a recessed surface with a second crystal orientation;
a dielectric sidewall of height h disposed on the top surface of the substrate and proximate the recess; and
a second crystalline semiconductor material of a maximum width w disposed in the recess, the recess defining an interface between the second crystalline semiconductor material and the substrate,wherein the second crystalline semiconductor material has a lattice mismatch with the first crystalline semiconductor material, the lattice mismatch causes defects in the second crystalline semiconductor material, and the defects terminate at a distance H above a bottom surface of the recess.
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Abstract
A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and forming a lattice-mismatched crystalline semiconductor material in the recess and opening.
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Citations
20 Claims
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1. A semiconductor structure comprising:
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a substrate comprising a first crystalline semiconductor material having a top surface with a first crystal orientation, the substrate including a recess from the top surface into the substrate with a maximum depth d, the recess comprising a recessed surface with a second crystal orientation; a dielectric sidewall of height h disposed on the top surface of the substrate and proximate the recess; and a second crystalline semiconductor material of a maximum width w disposed in the recess, the recess defining an interface between the second crystalline semiconductor material and the substrate, wherein the second crystalline semiconductor material has a lattice mismatch with the first crystalline semiconductor material, the lattice mismatch causes defects in the second crystalline semiconductor material, and the defects terminate at a distance H above a bottom surface of the recess. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor structure comprising:
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a photonic structure; and a crystalline semiconductor disposed above the photonic structure, wherein a surface of the crystalline semiconductor comprises a plurality of width of one ridge in the plurality of ridges is less than or equal to a visible light wavelength, and a spacing of the plurality of ridges is less than or equal to the visible light wavelength. - View Dependent Claims (18, 19)
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20. A semiconductor structure comprising:
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a first substrate comprising a first crystalline semiconductor material having a top surface and a bottom surface opposite from the top surface, the first substrate including a recess from the top surface into the first substrate; a dielectric layer on the top surface of the first substrate, an opening extending through the dielectric layer to the recess; and a second crystalline semiconductor material in the recess and the opening, the second crystalline semiconductor material being lattice mismatched to the first crystalline semiconductor material, the lattice mismatch causing defects in the second crystalline semiconductor material, the defects terminating in the recess and/or the opening; a photonic device on the second crystalline semiconductor material; a second substrate bonded to the photonic device; a first metal contact layer on the second substrate; and a second metal contact layer on the bottom surface of the first substrate.
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Specification