METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS
First Claim
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1. A semiconductor device, comprising:
- a first field effect transistor (FET) connected in series to a second FET;
a third FET connected in series to the first FET and the second FET;
bias circuitry coupled to the first FET and the second FET; and
an output conductor coupled to a terminal of the second FET, wherein the output conductor obtains an output signal from the second FET that is independent of the first FET.
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Abstract
A semiconductor device, comprising a first field effect transistor (FET) connected in series to a second FET, and a third FET connected in series to the first FET and the second FET. The semiconductor device further includes bias circuitry coupled to the first FET and the second FET, and an output conductor coupled to a terminal of the second FET, wherein the output conductor obtains an output signal from the second FET that is independent of the first FET.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a first field effect transistor (FET) connected in series to a second FET; a third FET connected in series to the first FET and the second FET; bias circuitry coupled to the first FET and the second FET; and an output conductor coupled to a terminal of the second FET, wherein the output conductor obtains an output signal from the second FET that is independent of the first FET. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification