SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
First Claim
1. A silicon carbide semiconductor device comprising:
- a silicon carbide layer having a first main surface and a second main surface opposite to said first main surface; and
a metal region,said silicon carbide layer includinga drift region that constitutes said first main surface and that has a first conductivity type,a body region that is provided on said drift region and that has a second conductivity type different from said first conductivity type, anda source region that is provided on said body region to be separated from said drift region, that constitutes said second main surface, and that has the first conductivity type,said silicon carbide layer being provided with a trench including a first side wall portion and a first bottom portion, said first side wall portion extending from said second main surface to said drift region through said source region and said body region, said first bottom portion being in said drift region,said silicon carbide layer including a second conductivity type region that is embedded in said drift region to face said first bottom portion and that has said second conductivity type,said second conductivity type region being electrically connected to said source region,said metal region being in contact with said source region,said source region and said second conductivity type region being electrically connected to each other via said metal region,said silicon carbide layer being provided with a stepped portion including a second bottom portion and a second side wall portion, said second bottom portion being between said first main surface and said second main surface, said second side wall portion connecting said second bottom portion and said second main surface to each other, andsaid metal region being in contact with said source region in said second main surface and is in contact with said second bottom portion.
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Accused Products
Abstract
A silicon carbide layer includes a drift region, a body region and a source region. The drift region constitutes a first main surface and has a first conductivity type. The body region is provided on the drift region, and has a second conductivity type. It is provided on the body region to be separated from the drift region, constitutes a second main surface, and has the first conductivity type. The silicon carbide layer is provided with a trench including a first side wall portion and a first bottom portion. The silicon carbide layer is embedded in the drift region to face the first bottom portion, and includes a second conductivity type region having the second conductivity type. The second conductivity type region is electrically connected to the source region.
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Citations
23 Claims
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1. A silicon carbide semiconductor device comprising:
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a silicon carbide layer having a first main surface and a second main surface opposite to said first main surface; and a metal region, said silicon carbide layer including a drift region that constitutes said first main surface and that has a first conductivity type, a body region that is provided on said drift region and that has a second conductivity type different from said first conductivity type, and a source region that is provided on said body region to be separated from said drift region, that constitutes said second main surface, and that has the first conductivity type, said silicon carbide layer being provided with a trench including a first side wall portion and a first bottom portion, said first side wall portion extending from said second main surface to said drift region through said source region and said body region, said first bottom portion being in said drift region, said silicon carbide layer including a second conductivity type region that is embedded in said drift region to face said first bottom portion and that has said second conductivity type, said second conductivity type region being electrically connected to said source region, said metal region being in contact with said source region, said source region and said second conductivity type region being electrically connected to each other via said metal region, said silicon carbide layer being provided with a stepped portion including a second bottom portion and a second side wall portion, said second bottom portion being between said first main surface and said second main surface, said second side wall portion connecting said second bottom portion and said second main surface to each other, and said metal region being in contact with said source region in said second main surface and is in contact with said second bottom portion. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12)
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2. (canceled)
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3. (canceled)
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4. (canceled)
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13. A method for manufacturing a silicon carbide semiconductor device, comprising steps of:
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preparing a silicon carbide layer having a first main surface and a second main surface opposite to said first main surface; and forming a trench in said second main surface of said silicon carbide layer, said silicon carbide layer including a drift region that constitutes said first main surface and that has a first conductivity type, a body region that is provided on said drift region and that has a second conductivity type different from said first conductivity type, and a source region that is provided on said body region to be separated from said drift region, that constitutes said second main surface, and that has the first conductivity type, said trench including a first side wall portion and a first bottom portion, said first side wall portion extending from said second main surface to said drift region through said source region and said body region, said first bottom portion being in said drift region, said silicon carbide layer including a second conductivity type region that is embedded in said drift region to face said first bottom portion and that has said second conductivity type, said second conductivity type region being electrically connected to said source region. - View Dependent Claims (14, 15)
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16. A silicon carbide semiconductor device comprising a silicon carbide layer having a first main surface and a second main surface opposite to said first main surface,
said silicon carbide layer including a drift region that constitutes said first main surface and that has a first conductivity type, a body region that is provided on said drift region and that has a second conductivity type different from said first conductivity type, and a source region that is provided on said body region to be separated from said drift region, that constitutes said second main surface, and that has the first conductivity type, said silicon carbide layer being provided with a trench including a first side wall portion and a first bottom portion, said first side wall portion extending from said second main surface to said drift region through said source region and said body region, said first bottom portion being in said drift region, said silicon carbide layer including a second conductivity type region that is embedded in said drift region to face said first bottom portion and that has said second conductivity type, said second conductivity type region being electrically connected to said source region.
Specification