Tunable Power Amplifier with Wide Frequency Range

• US 20170005628A1
• Filed: 09/14/2016
• Published: 01/05/2017
• Est. Priority Date: 08/05/2014
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Banerjee, Aritra, Schemm, Nathan R., Hezar, Rahmi, Ding, Lei, Haroun, Baher
• Granted Patent: US 10,116,270 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B81B 2207/99 Microstructural systems or auxiliary parts thereof not provided for in B81B2207/01 - B81B2207/115
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: H01G 5/16 using variation of distance between electrodes
• CPC Class Codes: H01G 5/38 Multiple capacitors, e.g. ganged
• CPC Class Codes: H01G 5/40 Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations
• CPC Class Codes: H01L 2223/6655 Matching arrangements, e.g. arrangement of inductive and capacitive components
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H03F 1/0205 in transistor amplifiers
• CPC Class Codes: H03F 1/0294 using vector summing of two or more constant amplitude phase-modulated signals
• CPC Class Codes: H03F 1/223 with MOSFET's
• CPC Class Codes: H03F 1/42 Modifications of amplifiers to extend the bandwidth
• CPC Class Codes: H03F 1/565 using inductive elements
• CPC Class Codes: H03F 2200/111 the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
• CPC Class Codes: H03F 2200/378 A variable capacitor being added in the output circuit, e.g. collector, drain, of an amplifier stage
• CPC Class Codes: H03F 2200/391 the output circuit of an amplifying stage comprising an LC-network
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2200/537 A transformer being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/541 Transformer coupled at the output of an amplifier
• CPC Class Codes: H03F 2200/546 A tunable capacitance being present in an amplifier circuit
• CPC Class Codes: H03F 2203/21157 A filter circuit being added at the output of a power amplifier stage
• CPC Class Codes: H03F 3/19 : with semiconductor devices only
• CPC Class Codes: H03F 3/193 : with field-effect devices H03F3/195 takes precedence
• CPC Class Codes: H03F 3/195 : in integrated circuits
• CPC Class Codes: H03F 3/21 : with semiconductor devices only H03F3/245 takes precedence
• CPC Class Codes: H03F 3/211 : using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/245 : with semiconductor devices only

Abstract

A circuit includes an amplifier configured to amplify an input signal and generate an output signal. The circuit also includes a tuning network configured to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, where the at least one tunable capacitor includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure disposed over a control structure, where the control structure is configured to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.

Claims

1. A circuit comprising:

an amplifier configured to amplify an input signal and generate an output signal; and

a tuning network configured to tune frequency response of the amplifier, the tuning network comprising at least one tunable capacitor, wherein the at least one tunable capacitor comprises at least one micro-electro mechanical system (MEMS) capacitor.

2. The circuit as specified in claim 1, wherein:

the amplifier comprises a first die;

the at least one MEMS capacitor comprises a second die; and

the first die and the second die are integrated in a single package.

3. The circuit as specified in claim 1, wherein:

the at least one MEMS capacitor comprises a MEMS superstructure disposed over a control structure; and

the control structure is configured to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.

4. The circuit as specified in claim 3, wherein the control structure is configured to electrostatically control a position of the MEMS superstructure.

5. The circuit as specified in claim 3, wherein:

the control structure comprises an electrode; and

the MEMS superstructure comprises at least one substantially planar membrane positioned parallel to the electrode.

6. The circuit as specified in claim 1, wherein the tuning network comprises multiple MEMS capacitors.

7. A method comprising:

amplifying an input signal and generating an output signal using an amplifier; and

tuning frequency response of the amplifier using a tuning network coupled to the amplifier, the tuning network comprising at least one tunable capacitor, the at least one tunable capacitor comprising a micro-electro mechanical system (MEMS) capacitor.

8. The method as specified in claim 7, wherein:

the amplifier comprises a first die;

the at least one MEMS capacitor comprises a second die; and

the first die and the second die are integrated in a single package.

9. The method as specified in claim 7, wherein:

the at least one MEMS capacitor comprises a MEMS superstructure disposed over a control structure; and

the control structure controls the MEMS superstructure and tunes the capacitance of the at least one MEMS capacitor.

10. The method as specified in claim 9, wherein the control structure electrostatically controls a position of the MEMS superstructure.

11. The method as specified in claim 9, wherein:

the control structure comprises an electrode; and

the MEMS superstructure comprises at least one substantially planar membrane positioned parallel to the electrode.

12. The method as specified in claim 7, wherein the tuning network comprises multiple MEMS capacitors.

13. A system comprising:

an amplifier comprising multiple power amplifiers; and

a tuning network comprising (i) multiple inductors each coupled to one of the power amplifiers and (ii) multiple tunable capacitors coupled to the inductors, wherein each said tunable capacitor comprises at least one micro-electro mechanical system (MEMS) capacitor in a package with the amplifier.

14. The system of claim 13, wherein:

the tuning network comprises four inductors and three tunable capacitors;

a first of the tunable capacitors is coupled to two of the inductors and a second of the tunable capacitors is coupled to two others of the inductors; and

a third of the tunable capacitors is coupled between the first and second tunable capacitors.

15. The system of claim 13, wherein the package has at least one metal layer, and the inductors comprise spiral inductors comprised of the at least one metal layer.