SUBSTRATE SUPPORT WITH REAL TIME FORCE AND FILM STRESS CONTROL
First Claim
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1. A method for forming high aspect ratio features in a gate electrode layer in a gate structure, the method comprising:
- performing an surface treatment process on gate electrode residuals remaining on a gate structure disposed on a substrate;
selectively forming a treated residual on the gate structure on the substrate with untreated regions nearby on the gate structure; and
performing a remote plasma residual removal process to remove the treated residual from the substrate.
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Abstract
Embodiments disclosed herein include a substrate support having a sensor assembly, and processing chamber having the same. In one embodiment, a substrate support has a puck. The puck has a workpiece support surface and a gas hole exiting the workpiece support surface. A sensor assembly is disposed in the gas hole and configured to detect a metric indicative of a deflection of a workpiece disposed on the workpiece support surface, wherein the sensor assembly is configured to allow gas to flow past the sensor assembly when positioned in the gas hole.
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Citations
21 Claims
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1. A method for forming high aspect ratio features in a gate electrode layer in a gate structure, the method comprising:
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performing an surface treatment process on gate electrode residuals remaining on a gate structure disposed on a substrate; selectively forming a treated residual on the gate structure on the substrate with untreated regions nearby on the gate structure; and performing a remote plasma residual removal process to remove the treated residual from the substrate. - View Dependent Claims (2, 3, 4, 5, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for forming high aspect ratio features in a gate electrode layer in a gate structure, the method comprising:
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altering film properties of gate electrode residuals on a gate structure formed on a substrate; and selectively removing the gate electrode residuals from the substrate. - View Dependent Claims (19, 20)
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21. A method for forming high aspect ratio features in a gate electrode layer in a gate structure, the method comprising
selectively treating gate electrode residuals remaining on a substrate after patterning a gate electrode layer disposed in a gate structure formed on a substrate; - and
selectively removing the treated gate electrode residuals from the gate structures by a remote plasma source generated from a gas mixture containing H2 gas.
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Specification