POWER MODULE

• US 20170110978A1
• Filed: 10/12/2016
• Published: 04/20/2017
• Est. Priority Date: 10/14/2015
• Status: Active Grant

• Current Assignee: Delta Electronics Int'l (Singapore) Pte. Ltd. (Delta Electronics Incorporated)
• Original Assignee: Delta Electronics Int'l (Singapore) Pte. Ltd. (Delta Electronics Incorporated)
• Inventors: Lai, Yiu-Wai, Chen, Da-Jung
• Granted Patent: US 9,973,104 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/24175 the item being metallic
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/2518 being disposed on at least two different sides of the body, e.g. dual array
• CPC Class Codes: H01L 23/051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 23/36 Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/49531 the additional leads being a wiring board
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49568 specifically adapted to facilitate heat dissipation
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 23/49861 Lead-frames fixed on or encapsulated in insulating substrates H01L23/4985, H01L23/49805 take precedence
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/25 : of a plurality of high density interconnect connectors
• CPC Class Codes: H01L 25/115 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/1203 : Rectifying Diode
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A power module includes a substrate, a first sub-module, a second sub-module and a circuit board. The semiconductor switches and the diodes of the first sub-module and the second sub-module are embedded within insulation layers. Consequently, the first sub-module and the second sub-module are formed as a high-voltage-side switching element and a low-voltage-side switching element of a bridge circuit. The first sub-module and the second sub-module are disposed on a first surface of the substrate. An electrode of the first sub-module and some electrodes of the second sub-module are electrically connected with corresponding conducting parts of a circuit board. A heat sink is disposed on a second surface of the substrate.

Claims

1. A power module, comprising:

a substrate comprising a first conductive layer disposed on a first surface and a second conductive layer disposed on a second surface opposite to the first surface, the first conductive layer comprising a plurality of conductive blocks;

a first sub-module disposed on the first conductive layer, the first sub-module comprising a first semiconductor switch and a first diode which is connected in parallel with the first semiconductor switch;

a second sub-module disposed on the first conductive layer, the second sub-module comprising a second semiconductor switch and a second diode which is connected in parallel with the second semiconductor switch, the second semiconductor switch being electrically connected with the first semiconductor switch through the plurality of conductive blocks;

a conductive pin disposed on the first conductive layer and electrically connected with at least one of the conductive blocks;

a circuit board disposed on the conductive pin and electrically connected with the first semiconductor switch and the second semiconductor switch through the conductive pin; and

a heat sink disposed on the second conductive layer.

2. The power module according to claim 1, wherein the first conductive layer comprises a first conductive block, a second conductive block, a third conductive block and a fourth conductive block, wherein a first end of the conductive pin is electrically connected with the first conductive block.

3. The power module according to claim 2, wherein the first sub-module further comprises a first electrode, a second electrode, a third electrode and a fourth electrode, wherein the first semiconductor switch comprises plural first conducting terminals, and the first diode comprises plural second conducting terminals, wherein the first electrode is electrically connected with the corresponding first conducting terminal of the first semiconductor switch and the corresponding second conducting terminal of the first diode, the second electrode and the third electrode are electrically connected with the corresponding first conducting terminals of the first semiconductor switch, and the fourth electrode is electrically connected with the corresponding second conducting terminal of the first diode, wherein the second electrode is electrically connected with the second conductive block, and the third electrode and the fourth electrode are electrically connected with the third conductive block.

4. The power module according to claim 3, wherein the second sub-module further comprises a fifth electrode, a sixth electrode and a seventh electrode, wherein the second semiconductor switch comprises plural third conducting terminals, and the second diode comprises plural fourth conducting terminals, wherein the fifth electrode and the seventh electrode are electrically connected with the corresponding third conducting terminals of the second semiconductor switch and the corresponding fourth conducting terminal of the second diode, the sixth electrode is electrically connected with the corresponding third conducting terminal of the second semiconductor switch, and the seventh electrode is electrically connected with the third conductive block.

5. The power module according to claim 4, wherein the first sub-module further comprises a first thermal/electrical conduction structure and a first lead electrode, and the second sub-module further comprises a second thermal/electrical conduction structure and a second lead electrode, wherein the first thermal/electrical conduction structure is arranged between the first electrode and the first lead electrode and electrically connected with the first electrode and the first lead electrode, wherein the second thermal/electrical conduction structure is arranged between the sixth electrode and the second lead electrode, and electrically connected with the sixth electrode and the second lead electrode, wherein the first lead electrode is electrically connected with the first conductive block.

6. The power module according to claim 5, wherein the circuit board further comprises a first conducting part, a second conducting part, a third conducting part and a fourth conducting part, wherein the first conducting part, the second conducting part, the third conducting part and the fourth conducting part are disposed on a first surface of the circuit board, wherein the second conducting part is electrically connected with the first electrode, the third conducting part is electrically connected with the fifth electrode, and the fourth conducting part is electrically connected with the sixth electrode.

7. The power module according to claim 5, wherein the first semiconductor switch is an insulated-gate bipolar transistor, and the first semiconductor switch comprises three first conducting terminals, wherein the three first conducting terminals serve as a gate, an emitter and a collector, respectively, wherein the first electrode is electrically connected with the collector of the first semiconductor switch, the second electrode is electrically connected with the gate of the first semiconductor switch, and the third electrode is electrically connected with the emitter of the first semiconductor switch.

8. The power module according to claim 7, wherein the first sub-module further comprises:

a first insulation layer, wherein plural first conductive vias and a second conductive via are formed in the first insulation layer;

a first conductive layer disposed on a first surface of the first insulation layer, and comprising plural separation structures, wherein the first conductive layer is divided into the second electrode, the third electrode, the fourth electrode and the first lead electrode through the plural separation structures; and

a second conductive layer disposed on a second surface of the first insulation layer, wherein the second conductive layer is contacted with first ends of the plural first conductive vias and contacted with a first end of the second conductive via.

9. The power module according to claim 8, wherein the first semiconductor switch and the first diode are embedded within the first insulation layer, wherein the first conducting terminal serving as the gate of the first semiconductor switch is electrically connected with the second electrode, the first conducting terminal serving as the emitter of the first semiconductor switch is electrically connected with the third electrode, and the first conducting terminal serving as the collector of the first semiconductor switch is contacted with the second ends of the corresponding first conductive vias so as to be electrically connected with the first electrode, wherein the second conducting terminal serving as an anode of the first diode is electrically connected with the fourth electrode, and the second conducting terminal serving as a cathode of the first diode is contacted with the second ends of the corresponding first conductive vias so as to be electrically connected with the first electrode.

10. The power module according to claim 8, wherein the first thermal/electrical conduction structure is embedded within the first insulation layer, and the first thermal/electrical conduction structure has a first surface and a second surface, wherein the first surface of the first thermal/electrical conduction structure is contacted with the first lead electrode, and the second surface of the first thermal/electrical conduction structure is contacted with a second end of the second conductive via so as to be electrically connected with the first electrode.

11. The power module according to claim 5, wherein the second semiconductor switch is an insulated-gate bipolar transistor, and the second semiconductor switch comprises three third conducting terminals, wherein the three third conducting terminals serve as a gate, an emitter and a collector, respectively, wherein the fifth electrode is electrically connected with the emitter of the second semiconductor switch, the sixth electrode is electrically connected with the gate of the second semiconductor switch, and the seventh electrode is electrically connected with the collector of the second semiconductor switch.

12. The power module according to claim 11, wherein the second sub-module further comprises:

a second insulation layer, wherein plural third conductive vias and a fourth conductive via are formed in the second insulation layer;

a third conductive layer disposed on a first surface of the second insulation layer, and divided into the seventh electrode and the second lead electrode; and

a fourth conductive layer disposed on a second surface of the second insulation layer, wherein the fourth conductive layer is divided into the fifth electrode and the sixth electrode, wherein the fifth electrode and the sixth electrode are contacted with first ends of the plural third conductive vias, and the sixth electrode is further contacted with a first end of the fourth conductive via.

13. The power module according to claim 12, wherein the second semiconductor switch and the second diode are embedded within the second insulation layer, wherein the third conducting terminal serving as the emitter of the second semiconductor switch is contacted with second ends of the corresponding third conductive vias so as to be electrically connected with the fifth electrode, the third conducting terminal serving as the gate of the second semiconductor switch is contacted with the second end of the corresponding third conductive via so as to be electrically connected with the sixth electrode, and the third conducting terminal serving as the collector of the second semiconductor switch is electrically connected with the seventh electrode, wherein the fourth conducting terminal serving as an anode of the second diode is contacted with the second ends of the corresponding third conductive vias so as to be electrically connected with the fifth electrode, and the fourth conducting terminal serving as a cathode of the second diode is electrically connected with the seventh electrode.

14. The power module according to claim 12, wherein the second thermal/electrical conduction structure is embedded within the second insulation layer, and the second thermal/electrical conduction structure has a first surface and a second surface, wherein the first surface of the second thermal/electrical conduction structure is contacted with the second lead electrode, and the second surface of the second thermal/electrical conduction structure is contacted with a second end of the fourth conductive via so as to be electrically connected with the sixth electrode.

15. The power module according to claim 5, wherein the fourth conductive block of the substrate is electrically connected with the second lead electrode.

16. The power module according to claim 5, wherein the conductive pin is a pin.

17. The power module according to claim 5, wherein the conductive pin is extended from the first conductive block.

18. The power module according to claim 5, wherein the conductive pin has a protrusion segment, and the circuit board has an insertion slot corresponding to the protrusion segment, wherein the protrusion segment of the conductive pin is inserted into the insertion slot of the circuit board.

19. The power module according to claim 18, wherein a first conducting part is disposed on a second surface of the circuit board and aligned with the insertion slot, wherein when the protrusion segment of the conductive pin is inserted into the insertion slot, the first conducting part is electrically connected with the insertion slot.

20. The power module according to claim 19, wherein when the protrusion segment of the conductive pin is inserted into the insertion slot, the first sub-module and the second sub-module are separated from the circuit board by a gap.