IMPEDANCE CONTROL IN RADIO-FREQUENCY SWITCHES
First Claim
1. A radio-frequency switch comprising:
- a first field-effect transistor disposed between a first node and a second node, the first field-effect transistor having a source, a drain, a gate, and a body;
a coupling path connected between the body of the first field-effect transistor and the gate of the first field-effect transistor, the coupling path including a diode; and
an adjustable impedance network connected between the body of the first field-effect transistor and a ground reference, the adjustable impedance network being configured to reduce radio-frequency distortion in the first field-effect transistor.
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Accused Products
Abstract
A radio-frequency switch includes a first field-effect transistor disposed between a first node and a second node, the first field-effect transistor having a source, a drain, a gate, and a body. The switch further includes a coupling path connected between the body of the first field-effect transistor and the gate of the first field-effect transistor, the coupling path including a diode. The switch further includes an adjustable impedance network connected between the body of the first field-effect transistor and a ground reference, the adjustable impedance network being configured to reduce radio-frequency distortion in the first field-effect transistor.
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Citations
22 Claims
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1. A radio-frequency switch comprising:
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a first field-effect transistor disposed between a first node and a second node, the first field-effect transistor having a source, a drain, a gate, and a body; a coupling path connected between the body of the first field-effect transistor and the gate of the first field-effect transistor, the coupling path including a diode; and an adjustable impedance network connected between the body of the first field-effect transistor and a ground reference, the adjustable impedance network being configured to reduce radio-frequency distortion in the first field-effect transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for fabricating a semiconductor die, the method comprising:
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providing a semiconductor substrate; forming a first field-effect transistor on the semiconductor substrate, the first field-effect transistor having a source, a drain, a gate, and a body; coupling the body of the gate of the first field-effect transistor using a coupling path that includes a diode; and forming an adjustable impedance network on the semiconductor substrate connected between the body of the first field-effect transistor and a ground reference, the adjustable impedance network being configured to reduce radio-frequency distortion in the first field-effect transistor. - View Dependent Claims (14, 15, 16, 17)
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18. A radio-frequency switch module comprising:
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a packaging substrate configured to receive a plurality of components; a semiconductor die mounted on the packaging substrate, the semiconductor die including a first field-effect transistor having a gate, a drain, a source, and a body; a coupling path connected between the body of the first field-effect transistor and one of the source, the drain, and the gate of the first field-effect transistor, the coupling path including a diode; and an impedance control circuit connected between the body of the first field-effect transistor and a ground reference, the impedance control circuit being configured to reduce radio-frequency distortion in the first field-effect transistor. - View Dependent Claims (19, 20, 21, 22)
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Specification