FABRICATION OF COMPOUND SEMICONDUCTOR STRUCTURES
First Claim
1. A method for fabricating a compound semiconductor structure, the method comprising:
- providing a semiconductor substrate comprising a first semiconductor material;
forming an insulating layer on the semiconductor substrate;
forming an opening in the insulating layer, thereby exposing a seed surface of the substrate, the opening having sidewalls and a bottom, wherein the bottom corresponds to the seed surface of the substrate;
forming a cavity structure above the insulating layer, the cavity structure comprising the opening and a lateral growth channel extending laterally over the substrate;
growing a matching array on the seed surface of the substrate, the matching array comprising at least a first matching structure comprising a second semiconductor material and a second matching structure comprising a third semiconductor material;
growing the compound semiconductor structure comprising a fourth semiconductor material on a seed surface of the matching array;
wherein the first, the second, the third and the fourth semiconductor material are different from each other.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor substrate, comprising a first semiconductor material, is provided and an insulating layer is formed thereon; an opening is formed in the insulating layer. Thereby, a seed surface of the substrate is exposed. The opening has sidewalls and a bottom and the bottom corresponds to the seed surface of the substrate. A cavity structure is formed above the insulating layer, including the opening and a lateral growth channel extending laterally over the substrate. A matching array is grown on the seed surface of the substrate, including at least a first semiconductor matching structure comprising a second semiconductor material and a second semiconductor matching structure comprising a third semiconductor material. The compound semiconductor structure comprising a fourth semiconductor material is grown on a seed surface of the second matching structure. The first through fourth semiconductor materials are different from each other. Corresponding semiconductor structures are also included.
-
Citations
25 Claims
-
1. A method for fabricating a compound semiconductor structure, the method comprising:
-
providing a semiconductor substrate comprising a first semiconductor material; forming an insulating layer on the semiconductor substrate; forming an opening in the insulating layer, thereby exposing a seed surface of the substrate, the opening having sidewalls and a bottom, wherein the bottom corresponds to the seed surface of the substrate; forming a cavity structure above the insulating layer, the cavity structure comprising the opening and a lateral growth channel extending laterally over the substrate; growing a matching array on the seed surface of the substrate, the matching array comprising at least a first matching structure comprising a second semiconductor material and a second matching structure comprising a third semiconductor material; growing the compound semiconductor structure comprising a fourth semiconductor material on a seed surface of the matching array; wherein the first, the second, the third and the fourth semiconductor material are different from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
-
-
25. A compound semiconductor structure comprising:
-
a semiconductor substrate comprising a first semiconductor material; an insulating layer on the semiconductor substrate; an opening in the insulating layer, the opening having sidewalls and a bottom, wherein the bottom corresponds to a seed surface of the substrate; a cavity structure above the insulating layer, the cavity structure comprising the opening and a lateral growth channel extending laterally over the substrate; a matching array epitaxially grown on the seed surface of the substrate, the matching array comprising at least a first matching structure comprising a second semiconductor material and a second matching structure comprising a third semiconductor material; a compound semiconductor structure comprising a fourth semiconductor material epitaxially grown on a seed surface of the matching array; wherein the first, the second, the third and the fourth semiconductor material are different from each other.
-
Specification