SWITCH INCLUDING A PHASE CHANGE MATERIALS BASED STRUCTURE WHERE ONLY ONE PART IS ACTIVATABLE

• US 20180005786A1
• Filed: 08/04/2017
• Published: 01/04/2018
• Est. Priority Date: 07/04/2016
• Status: Active Grant

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: NAVARRO, Gabriele, SAINT-PATRICE, Damien, LEON, Alexandre, PUYAL, Vincent, REIG, Bruno
• Granted Patent: US 10,529,515 B2
• Time in Patent Office: Days
• CPC Class Codes: H01H 37/34 Means for transmitting heat thereto, e.g. capsule remote from contact member
• CPC Class Codes: H01H 37/72 Switches in which the opening movement and the closing movement of a contact are effected respectively by heating and cooling or vice versa
• CPC Class Codes: H01P 1/127 Strip line switches
• CPC Class Codes: H01P 1/184 Strip line phase-shifters H01P1/181, H01P1/185, H01P1/19 take precedence
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/253 having three or more terminals, e.g. transistor-like devices
• CPC Class Codes: H10N 70/823 adapted for essentially horizontal current flow, e.g. bridge type devices
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe

Abstract

Selector switch provided with:

• • a structure based on at least one phase change material placed between a first conducting element and a second conducting element, the phase change material being capable of changing state,
  • means of heating the phase change material provided with at least one first heating electrode and at least one other heating electrode,
  • the structure based on a phase change material being configured to form a confined active zone of the phase change material at a distance from the conducting elements.

Claims

1. Selector switch capable of making or breaking a connection between at least one first conducting element and at least one second conducting element, comprising the following, on a support:

a structure based on at least one phase change material located between the first conducting element and the second conducting element, the phase change material being capable of changing state between a crystalline state wherein the phase change material has a first resistivity and an amorphous state wherein the phase change material has a second resistivity higher than the first resistivity,

means of heating the phase change material provided with at least one first heating electrode and at least one second heating electrode,

wherein the phase change material structure is formed from at least one central region located between the first conducting element and the second conducting element and between the first electrode and the second electrode, the phase change material structure also being provided with a first branch, a second branch, a third branch and a fourth branch, that are distinct and that extend around a central region, the first branch being in contact with the first conducting element, the second branch being in contact with the second conducting element, the third branch being in contact with the first electrode and the fourth branch being in contact with the second electrode,

the third and/or the fourth branch(es) having a narrower section in a zone in contact with the central region than in a zone in contact with the electrode with which it is in contact.

2. Selector switch according to claim 1, the first branch and/or the second branch having a narrower section in a zone in contact with the central region than in a zone in contact with the conducting element with which it is in contact.

3. Selector switch according to claim 1, in which the section of at least one of said branches becomes narrower as the distance from the central region reduces.

4. Selector switch according to claim 1, the widths of the third branch and the fourth branch being less than the widths of the first branch and a second branch.

5. Selector switch according to claim 1, the means of heating being capable of putting a central volume called the active zone of the phase change material structure into an amorphous state, the phase change material structure being configured such that the central volume is not in contact with the first conducting element and the second conducting element and is located between a first volume of phase change material in a crystalline state in contact with the first conducting element and a second volume of phase change material in a crystalline state in contact with the second conducting element such that the central volume separates the first volume from the second volume and prevents a signal being routed between the first volume and the second volume, the central volume being smaller than or equal to ⅓

of the total accumulated volume including the first volume, the second volume and the central volume.

6. Selector switch according to claim 1, in which the first branch, the second branch, the third branch and the fourth branch extend parallel to a principal plane of the support.

7. Selector switch according to claim 1, wherein the first branch and the second branch extend in a first plane, the third branch and the fourth branch extend in a second plane, the angle between the first plane and the second plane not being null, and particularly 90°

.

8. Selector switch according to claim 1, wherein the phase change material structure is formed between the first electrode and the second electrode of a stack comprising a first layer based on a first phase change material, the first layer being located between a second layer and a third layer, the second layer and the third layer being based on at least one second phase change material different from the first phase change material.

9. Selector switch according to claim 7, the melting temperature of the first phase change material being less than the melting temperature of the second phase change material and/or its thermal conductivity being higher than the thermal conductivity of the second phase change material.

10. Selector switch according to claim 7, wherein the phase change material structure is formed between the first electrode and the second electrode of a stack comprising a first layer of phase change material located between a second layer of phase change material and a third layer based on a phase change material, the sections of the second layer of phase change material and the third layer of phase change material becoming narrower as the distances from the first electrode and the second electrode respectively increase and as the distance from the first layer of phase change material reduces.

11. Selector switch according to claim 7, wherein the first electrode and the second electrode are located in a plane orthogonal to the principal plane of the support, the phase change material structure is formed between the first electrode and the second electrode of a stack comprising a first layer of a first phase change material located between a second layer of phase change material and a third layer of phase change material, at least the first layer of phase change material comprising a thinned portion located between a portion of the second layer of phase change material and a portion of the third layer of phase change material.

12. Device comprising at least one selector switch according to claim 1, the selector switch being an RF selector switch, capable of routing an RF signal or interrupting routing of an RF signal between the first conducting element and the second conducting element.

13. Switching system comprising a plurality of selector switches according to claim 1, the selector switches being arranged in parallel such that the first conducting elements of each of the selector switches are connected to each other and such that the second conducting elements of each of the selector switches are connected to each other.

14. System comprising a plurality of selector switches according to claim 1, wherein:

the first electrodes of the selector switches are connected to each other and to a first biasing means, the second electrodes of the selector switches being connected to each other and to a second biasing means.

or wherein the first electrode of a first selector switch is connected to a first biasing means, the second electrode of the first selector switch being connected to the first electrode of a following selector switch, and the second electrode of a last selector switch is connected to a second biasing means.

15. System according to claim 13, characterised in that the first biasing means is a current generator and the second biasing means is also a current generator.