SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
First Claim
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1. A semiconductor substrate, comprising:
- an epitaxy region, located at a central portion of a main plane of the semiconductor substrate;
a periphery region, surrounding the epitaxy region; and
an injured region, distributed inside the periphery region.
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Abstract
A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate has an epitaxy region located at a central portion of a main plane of the semiconductor substrate, a periphery region surrounding the epitaxy region and an injured region distributed inside the periphery region.
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Citations
16 Claims
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1. A semiconductor substrate, comprising:
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an epitaxy region, located at a central portion of a main plane of the semiconductor substrate; a periphery region, surrounding the epitaxy region; and an injured region, distributed inside the periphery region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A manufacturing method of a semiconductor substrate, comprising:
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providing a semiconductor substrate; and forming an injured region inside a periphery region of the semiconductor substrate. - View Dependent Claims (15, 16)
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Specification