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ENDPOINT DETECTION ALGORITHM FOR ATOMIC LAYER ETCHING (ALE)

  • US 20180068831A1
  • Filed: 03/08/2017
  • Published: 03/08/2018
  • Est. Priority Date: 09/02/2016
  • Status: Active Grant
First Claim
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1. A method for determining process endpoint data in a plasma processing system, comprising:

  • receiving optical emission spectroscopy (OES) data from a plasma processing chamber of the plasma processing system that performs a multi-step plasma process of a substrate, wherein the cyclical multi-step plasma process comprises at least two process steps that are cyclically repeated;

    determining a first quiescent portion of the received OES data, the first quiescent portion is an average of a filtered process-step of the multi-step plasma process; and

    determining a first endpoint of the determined first quiescent portion.

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