Semiconductor Material Doping
First Claim
1. A device comprising:
- a group III nitride ultraviolet radiation generating structure; and
a p-type group III nitride superlattice layer at least partially transparent to ultraviolet radiation generated by the ultraviolet radiation generating structure, wherein the superlattice layer comprises a set of quantum wells and barriers, wherein a valence band discontinuity between a quantum well and an immediately adjacent barrier in the superlattice layer is such that a dopant energy level of a dopant in the immediately adjacent barrier in the superlattice layer is within three thermal energies of at least one of;
a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well.
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Accused Products
Abstract
A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).
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Citations
20 Claims
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1. A device comprising:
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a group III nitride ultraviolet radiation generating structure; and a p-type group III nitride superlattice layer at least partially transparent to ultraviolet radiation generated by the ultraviolet radiation generating structure, wherein the superlattice layer comprises a set of quantum wells and barriers, wherein a valence band discontinuity between a quantum well and an immediately adjacent barrier in the superlattice layer is such that a dopant energy level of a dopant in the immediately adjacent barrier in the superlattice layer is within three thermal energies of at least one of;
a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An ultraviolet device comprising:
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a group III nitride n-type layer; a group III nitride ultraviolet radiation generating structure located on the group III nitride n-type layer; and a p-type group III nitride superlattice layer at least partially transparent to ultraviolet radiation generated by the radiation generating structure located on the ultraviolet radiation generating structure, wherein the superlattice layer comprises a plurality of quantum well alternating with a plurality of barriers, wherein a valence band discontinuity between a quantum well and an immediately adjacent barrier in the superlattice layer is such that a dopant energy level of a dopant in the immediately adjacent barrier in the superlattice layer is within three thermal energies of at least one of;
a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well. - View Dependent Claims (15, 16, 17)
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18. An ultraviolet device comprising:
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a n-type layer; an ultraviolet radiation generating structure located on the n-type layer, wherein the ultraviolet radiation generating structure comprises a multiple quantum well structure; and a p-type superlattice layer at least partially transparent to ultraviolet radiation generated by the radiation generating structure located on the ultraviolet radiation generating structure, wherein the superlattice layer comprises a set of quantum well and barriers, wherein a valence band discontinuity between a quantum well and an immediately adjacent barrier in the superlattice layer is such that a dopant energy level of a dopant in the immediately adjacent barrier in the superlattice layer is within three thermal energies of at least one of;
a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well; anda p-type contact layer located on the superlattice layer, wherein the superlattice layer is located between the radiation generating structure and the p-type contact layer. - View Dependent Claims (19, 20)
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Specification