SEMICONDUCTOR DEVICES, A FLUID SENSOR AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device (100, 110, 120, 130, 140) comprising:
- a plurality of quantum structures (101) comprising predominantly germanium, wherein the plurality of quantum structures are formed on a first semiconductor layer structure (102), wherein the quantum structures of the plurality of quantum structures (101) have a lateral dimension of less than 15 nm and an area density of at least 8×
1011 quantum structures per cm2, wherein the plurality of quantum structures (101) are configured to emit light with a light emission maximum at a wavelength of between 2 μ
m and 10 μ
m or to absorb light with a light absorption maximum at a wavelength of between 2 μ
m and 10 μ
m.
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Abstract
A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.
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Citations
20 Claims
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1. A semiconductor device (100, 110, 120, 130, 140) comprising:
a plurality of quantum structures (101) comprising predominantly germanium, wherein the plurality of quantum structures are formed on a first semiconductor layer structure (102), wherein the quantum structures of the plurality of quantum structures (101) have a lateral dimension of less than 15 nm and an area density of at least 8×
1011 quantum structures per cm2, wherein the plurality of quantum structures (101) are configured to emit light with a light emission maximum at a wavelength of between 2 μ
m and 10 μ
m or to absorb light with a light absorption maximum at a wavelength of between 2 μ
m and 10 μ
m.- View Dependent Claims (2, 5, 6, 7, 8, 9, 10, 11, 12, 16)
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3. A semiconductor device (100, 110, 120, 130, 140), comprising:
a plurality of quantum structures (101) formed on a first semiconductor layer structure (102), wherein the quantum structures of the plurality of quantum structures (101) have a lateral dimension of less than 15 nm, wherein the plurality of quantum structures (101) comprise germanium and antimony, and wherein the plurality of quantum structures (101) are configured to emit light with a light emission maximum at a wavelength of between 5 μ
m and 7 μ
m or to absorb light with a light absorption maximum at a wavelength of between 5 μ
m and 7 μ
m.- View Dependent Claims (4)
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13. A semiconductor device (300, 310), comprising:
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a quantum well layer stack (331) comprising a plurality of first quantum well layers (332) and a plurality of second quantum well layers (333), wherein the first quantum well layers of the plurality of first quantum well layers (332) and the second quantum well layers of the plurality of second quantum well layers (333) are arranged alternatingly on a first semiconductor layer structure (302), wherein the first quantum well layers of the plurality of first quantum well layers (332) comprise silicon-germanium and the second quantum well layers of the plurality of second quantum well layers (333) comprise silicon, wherein the first quantum well layers of the plurality of first quantum well layers (332) and the second quantum well layers of the plurality of second quantum well layers (333) have a thickness of below 100 nm, and wherein the quantum well layer stack (331) is configured to emit light with a light emission maximum at a wavelength of between 2 μ
m and 10 μ
m or to absorb light with a light absorption maximum at a wavelength of between 2 μ
m and 10 μ
m. - View Dependent Claims (14, 15)
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17. A method (200) for forming a semiconductor device, the method comprising:
forming (210) a plurality of quantum structures comprising predominantly germanium on a first semiconductor layer structure, wherein the quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 1×
1010 quantum structures per cm2, wherein the plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μ
m and 10 μ
m or to absorb light with a light absorption maximum at a wavelength of between 2 μ
m and 10 μ
m, wherein the plurality of quantum structures are grown at least by using low pressure chemical vapor deposition.- View Dependent Claims (18, 19)
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20. A fluid sensor (700), comprising
a detector (720) comprising a processing module 790 configured to generate a detection signal (793) based on light (791) emitted by an emitter (710) and propagated through a fluid, wherein the detector (720) or the emitter (710) comprises a plurality of quantum structures (101) comprising predominantly germanium, wherein the plurality of quantum structures are formed on a first semiconductor layer structure (102), wherein the quantum structures of the plurality of quantum structures (101) have a lateral dimension of less than 15 nm and an area density of at least 1× - 1010 quantum structures per cm2, wherein the plurality of quantum structures (101) are configured to emit light with a light emission maximum at a wavelength of between 2 μ
m and 10 μ
m or to absorb light with a light absorption maximum at a wavelength of between 2 μ
m and 10 μ
m.
- 1010 quantum structures per cm2, wherein the plurality of quantum structures (101) are configured to emit light with a light emission maximum at a wavelength of between 2 μ
Specification