DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE
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Abstract
Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.
214 Citations
17 Claims
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1. (canceled)
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2. A display device comprising:
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a driving transistor comprising; a first gate electrode; a second gate electrode over the first gate electrode; a first oxide semiconductor layer between the first gate electrode and the second gate electrode; a first source electrode over and electrically connected to the first oxide semiconductor layer; and a first drain electrode over and electrically connected to the first oxide semiconductor layer; a switching transistor comprising; a second oxide semiconductor layer; a third gate electrode over the second oxide semiconductor layer; a second source electrode over and electrically connected to the second oxide semiconductor layer; and a second drain electrode over and electrically connected to the second oxide semiconductor layer; and an organic EL element, wherein the switching transistor does not comprise a gate electrode under the second oxide semiconductor layer, wherein the organic EL element comprises a first electrode, a second electrode over the first electrode, and a layer comprising an organic compound between the first electrode and the second electrode, wherein one of the second source electrode and the second drain electrode is electrically connected to a signal line, wherein the other of the second source electrode and the second drain electrode is electrically connected to one of the first gate electrode and the second gate electrode of the driving transistor, wherein one of the first source electrode and the first drain electrode is electrically connected to the organic EL element, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc, and wherein a length of the first gate electrode in a channel length direction is larger than a length of the second gate electrode in the channel length direction. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9)
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10. A display device comprising:
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a driving transistor comprising; a first gate electrode; a second gate electrode over the first gate electrode; a first oxide semiconductor layer between the first gate electrode and the second gate electrode; a first source electrode over and electrically connected to the first oxide semiconductor layer; and a first drain electrode over and electrically connected to the first oxide semiconductor layer; a switching transistor comprising; a second oxide semiconductor layer; a third gate electrode over the second oxide semiconductor layer; a second source electrode over and electrically connected to the second oxide semiconductor layer; and a second drain electrode over and electrically connected to the second oxide semiconductor layer; and an organic EL element, wherein the switching transistor does not comprise a gate electrode under the second oxide semiconductor layer, wherein the organic EL element comprises a first electrode, a second electrode over the first electrode, and a layer comprising an organic compound between the first electrode and the second electrode, wherein one of the second source electrode and the second drain electrode is electrically connected to a signal line, wherein the other of the second source electrode and the second drain electrode is electrically connected to one of the first gate electrode and the second gate electrode of the driving transistor, wherein one of the first source electrode and the first drain electrode is electrically connected to the organic EL element, wherein the organic EL element is provided over the driving transistor, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc, and wherein a length of the first gate electrode in a channel length direction is larger than a length of the second gate electrode in the channel length direction. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification