SEMICONDUCTOR LASER DIODE

• US 20190312406A1
• Filed: 05/31/2017
• Published: 10/10/2019
• Est. Priority Date: 06/13/2016
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Reill, Wolfgang
• Granted Patent: US 11,245,246 B2
• Time in Patent Office: Days
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/023 Mount members, e.g. sub-mount members
• CPC Class Codes: H01S 5/0233 Mounting configuration of laser chips
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/0235 Method for mounting laser chips
• CPC Class Codes: H01S 5/0237 by soldering
• CPC Class Codes: H01S 5/02461 Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
• CPC Class Codes: H01S 5/02469 Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
• CPC Class Codes: H01S 5/04254 characterised by the shape
• CPC Class Codes: H01S 5/0653 Mode suppression, e.g. specific multimode

Abstract

A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, and at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element.

Claims

1-13. -13. (canceled)

14. A semiconductor laser diode comprising:

a semiconductor body having an emitter region; and

a first connection element that electrically contacts the semiconductor body in the emitter region,

wherein

the semiconductor body is in contact with the first connection element in the emitter region, and

at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element.

15. The semiconductor laser diode according to claim 14, wherein

the structuring has a density of structures, wherein the density of the structures increases towards a radiation exit surface,

the semiconductor body comprises a subregion arranged laterally adjacent to the emitter region,

at least in places in the subregion, the semiconductor body has a further structuring comprising further structures, wherein the further structuring is configured to weaken secondary modes, and

the structures of the structuring have a mean height (h) that is smaller than a mean height (h) of the further structures of the further structuring.

16. The semiconductor laser diode according to claim 14, wherein the structuring has a density of structures and the density of the structures increases toward a radiation exit surface.

17. The semiconductor laser diode according to claim 16, wherein the closer the structures are to the radiation exit surface, the smaller a distance (d) is between the neighboring structures.

18. The semiconductor laser diode according to claim 14, wherein at least in places, the contact area having the structuring located between the semiconductor body and the first connection element is at least 1.5 times as large as a contact area free of any structuring and located between the semiconductor body and the connection element.

19. The semiconductor laser diode according to claim 14, wherein the connection element comprises a metallic layer that completely covers the semiconductor body in the emitter region.

20. The semiconductor laser diode according to claim 14, wherein at least in places, the structuring comprises at least one structure selected from the group consisting of truncated cone, inverse truncated cone, truncated pyramid, inverse truncated pyramid, cone, inverse cone, pyramid, inverse pyramid, spherical shell and inverse spherical shell.

21. The semiconductor laser diode according to claim 14, wherein a maximum lateral extension of the structures is at least 400 nm.

22. The semiconductor laser diode according to claim 14, wherein, in the emitter region, the semiconductor body comprises a connection region directly adjoining the first connection element at the contact area, and the connection region is not completely pierced at any point.

23. The semiconductor laser diode according to claim 14, wherein the semiconductor body comprises a subregion arranged laterally adjacent to the emitter region, and at least in places in the subregion, the semiconductor body has a further structuring comprising further structures, said further structuring being configured to weaken secondary modes.

24. The semiconductor laser diode according to claim 23, wherein an electrically insulating insulation element is arranged between the subregion and the first connection element and in the subregion completely covers the semiconductor body on its side facing the first connection element.

25. The semiconductor laser diode according to claim 23, wherein the structures of the structuring have a mean height (h) that is smaller than a mean height (h) of the further structures of the further structuring.

26. The semiconductor laser diode according to claim 14, wherein the structures are etched.

27. The semiconductor laser diode according to claim 15, wherein the further structures are etched.