SEMICONDUCTOR PACKAGE AND METHODS OF FORMING THE SAME
First Claim
1. A method of forming a semiconductor device, the method comprising:
- forming a first dielectric layer over a passivation layer of a die and over a die connector of the die, the die connector extending through the passivation layer;
curing the first dielectric layer, wherein after curing the first dielectric layer, the first dielectric layer has a curved upper surface distal to the passivation layer, wherein the curved upper surface comprises;
a first region over the die connector; and
a second region laterally adjacent to the die connector, wherein the first region extends further from the passivation layer than the second region, wherein a first distance between the first region and the second region is larger than a first pre-determined threshold;
forming a second dielectric layer over the cured first dielectric layer; and
curing the second dielectric layer, wherein after curing the second dielectric layer, an upper surface of the second dielectric layer distal to the passivation layer comprises;
a third region over the first region; and
a fourth region over the second region, wherein a second distance between the third region and the fourth region is smaller than the first pre-determined threshold.
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Abstract
A method of forming a semiconductor device includes forming a first dielectric layer over a front side of a wafer, the wafer having a plurality of dies at the front side of the wafer, the first dielectric layer having a first shrinkage ratio smaller than a first pre-determined threshold; curing the first dielectric layer at a first temperature, where after curing the first dielectric layer, a first distance between a highest point of an upper surface of the first dielectric layer and a lowest point of the upper surface of the first dielectric layer is smaller than a second pre-determined threshold; thinning the wafer from a backside of the wafer; and performing a dicing process to separate the plurality of dies into individual dies.
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Citations
20 Claims
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1. A method of forming a semiconductor device, the method comprising:
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forming a first dielectric layer over a passivation layer of a die and over a die connector of the die, the die connector extending through the passivation layer; curing the first dielectric layer, wherein after curing the first dielectric layer, the first dielectric layer has a curved upper surface distal to the passivation layer, wherein the curved upper surface comprises; a first region over the die connector; and a second region laterally adjacent to the die connector, wherein the first region extends further from the passivation layer than the second region, wherein a first distance between the first region and the second region is larger than a first pre-determined threshold; forming a second dielectric layer over the cured first dielectric layer; and curing the second dielectric layer, wherein after curing the second dielectric layer, an upper surface of the second dielectric layer distal to the passivation layer comprises; a third region over the first region; and a fourth region over the second region, wherein a second distance between the third region and the fourth region is smaller than the first pre-determined threshold. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of forming a semiconductor device, the method comprising:
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forming a first dielectric layer over a front side of a wafer, the wafer having a plurality of dies at the front side of the wafer, the first dielectric layer having a first shrinkage ratio smaller than a first pre-determined threshold; curing the first dielectric layer at a first temperature, wherein after curing the first dielectric layer, a first distance between a highest point of an upper surface of the first dielectric layer and a lowest point of the upper surface of the first dielectric layer is smaller than a second pre-determined threshold; thinning the wafer from a backside of the wafer; and performing a dicing process to separate the plurality of dies into individual dies. - View Dependent Claims (14, 15, 16)
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17. A semiconductor device comprising:
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a die having a die connector and a passivation layer, the die connector extending through the passivation layer; a first dielectric layer over the passivation layer, the first dielectric layer having a first portion in physical contact with the die connector and having a second portion spaced apart from the die connector, an upper surface of the first portion of the first dielectric layer extending further from the passivation layer than an upper surface of the second portion of the first dielectric layer; and a second dielectric layer over the upper surface of the second portion of the first dielectric layer, wherein the die connector, the second dielectric layer, and the first portion of the first dielectric layer have a same upper surface that is level. - View Dependent Claims (18, 19, 20)
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Specification