STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH HYBRID FINS
First Claim
1. A semiconductor device structure, comprising:
- a semiconductor substrate;
an isolation structure over the semiconductor substrate;
a first fin structure over the semiconductor substrate and surrounded by the isolation structure;
a stack of nanostructures over the first fin structure, wherein the nanostructures are separated from each other; and
a second fin structure over the semiconductor substrate, wherein the second fin structure has an embedded portion surrounded by the isolation structure and a protruding portion over the isolation structure, and the embedded portion is separated from the protruding portion by a distance.
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Abstract
A structure and a formation method of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and an isolation structure over the semiconductor substrate. The semiconductor device structure also includes a first fin structure over the semiconductor substrate and surrounded by the isolation structure and a stack of nanostructures over the first fin structure. The nanostructures are separated from each other. The semiconductor device structure further includes a second fin structure over the semiconductor substrate. The second fin structure has an embedded portion surrounded by the isolation structure and a protruding portion over the isolation structure. The embedded portion is separated from the protruding portion by a distance.
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Citations
20 Claims
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1. A semiconductor device structure, comprising:
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a semiconductor substrate; an isolation structure over the semiconductor substrate; a first fin structure over the semiconductor substrate and surrounded by the isolation structure; a stack of nanostructures over the first fin structure, wherein the nanostructures are separated from each other; and a second fin structure over the semiconductor substrate, wherein the second fin structure has an embedded portion surrounded by the isolation structure and a protruding portion over the isolation structure, and the embedded portion is separated from the protruding portion by a distance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device structure, comprising:
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a semiconductor substrate; a stack of nanostructures, wherein the nanostructures are separated from each other; and a fin structure over the semiconductor substrate, wherein a top of the fin structure is at a higher height level than a top of the nanostructures. - View Dependent Claims (12, 13, 14, 15)
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16. A method for forming a semiconductor device structure, comprising:
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forming a sacrificial layer over a semiconductor substrate; forming a semiconductor stack over a first region of the sacrificial layer, wherein the semiconductor stack has a plurality of first semiconductor layers and a plurality of second semiconductor layers laid out alternately; forming a third semiconductor layer over a second region of the sacrificial layer; patterning the semiconductor stack, the third semiconductor layer, and the sacrificial layer to form a first fin structure and a second fin structure, wherein the first fin structure comprises a portion of the semiconductor stack, and the second fin structure comprises a portion of the third semiconductor layer; removing the sacrificial layer and the second semiconductor layers so that a plurality of nanostructures constructed by the first semiconductor layers are formed; and forming a dielectric layer to wrap around each of the nanostructures and to wrap around the second fin structure. - View Dependent Claims (17, 18, 19, 20)
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Specification