SILICENE ELECTRONIC DEVICE

• US 20200135878A1
• Filed: 03/18/2019
• Published: 04/30/2020
• Est. Priority Date: 10/25/2018
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: OH, Youngtek, JUNG, Jinwook, KWON, Hyeokshin, SEO, Wontaek, JEON, lnsu
• Granted Patent: US 10,818,765 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/16 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 29/1606 Graphene
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/51 Insulating materials associated therewith for MIS structures on thin film semiconductor H01L29/4908
• CPC Class Codes: H01L 29/778 with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface H01L29/803 takes precedence
• CPC Class Codes: H01L 29/78684 having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys H01L29/7869 takes precedence
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.

Claims

1. A silicene electronic device comprising:

a silicene material layer having a two-dimensional (2D) honeycomb structure formed by silicon atoms, doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and comprises at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant; and

an electrode material layer on the silicene material layer and includes a material having a work function lower than an electron affinity of silicene.

2. The silicene electronic device of claim 1, wherein the electrode material layer comprises an electride.

3. The silicene electronic device of claim 2, wherein the electride comprises a C12A7 electride, a 2D electride, and a Y₅Si₃ electride.

4. The silicene electronic device of claim 1, wherein the electrode material layer comprises at least one material selected from the group consisting of Mg, Ca, Y, La, and Er.

5. The silicene electronic device of claim 1, further comprising an intermediate layer between the silicene material layer and the electrode material layer.

6. The silicene electronic device of claim 5, wherein the intermediate layer comprises a passivation layer or an insulating layer on a surface of the silicene material layer.

7. The silicene electronic device of claim 6, wherein the passivation layer comprises Se or S.

8. The silicene electronic device of claim 6, wherein the insulating layer comprises boron nitride (BN), SiO₂, or SiN.

9. The silicene electronic device of claim 6, wherein the insulating layer is on an entire upper surface of the silicene material layer.

10. The silicene electronic device of claim 6, further comprising a graphene layer between the intermediate layer and the electrode material layer.

11. The silicene electronic device of claim 1, further comprising an electrode material protection layer protecting the electrode material layer.

12. The silicene electronic device of claim 11, wherein the electrode material protection layer covers an area greater than an area of the electrode material layer so that sides of the electrode material layer are not exposed to the outside of the electrode material protection layer.

13. The silicene electronic device of claim 1, wherein the silicene material layer is entirely doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and comprises one p-type dopant region and one n-type dopant region.

14. The silicene electronic device of claim 1, wherein a doping concentration of the n-type dopant in the n-type dopant region is 10¹²˜

10¹⁸/cm³.

15. The silicene electronic device of claim 1, wherein a doping concentration of the p-type dopant in the p-type dopant region is 10¹²˜

10¹⁸/cm³.

16. The silicene electronic device of claim 1, wherein the silicene material layer comprises at least one p region doped with a p-type dopant and at least two n+ regions, doped with an n-type dopant on both sides of the at least one p region,

wherein a gate electrode having a width equal to or greater than a width of the at least one p region is on the at least one p region, and a source and a drain are on the at least two n+ regions.

17. The silicene electronic device of claim 16, further comprising a lower intermediate layer on a lower surface of the silicene material layer.

18. The silicene electronic device of claim 17, wherein the lower intermediate layer includes one of BN, SiO₂, and SiN.

19. The silicene electronic device of claim 17, further comprising a lower gate insulating layer and a lower gate electrode on a lower side of the silicene material layer.

20. The silicene electronic device of claim 19, wherein the lower gate electrode has a width equal to or greater than a width corresponding to the at least two n+ region and the at least one p region of the silicene material layer.