Substrate support with multilevel heat transfer mechanism
First Claim
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1. A substrate support for supporting a substrate in a process chamber, comprising:
- a body having a first side and a second side bounded by a perimeter;
a ring extending from the first side proximate the perimeter;
a perimeter channel disposed in the first side adjacent to and radially inward of the ring;
a plurality of substrate support pads extending from the first side;
a well disposed in the first side of the body;
a fluid passage having a diameter smaller than a diameter of the well disposed through the body and coupled to the well, the passage adapted to provide backside gas to the first side; and
a plurality of gas flow channels disposed in the first side radially outwards from the well and fluidly coupled to the perimeter channel.
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Abstract
A substrate support having heat transfer enhancing topography. Generally, the substrate support includes a first side that supports the substrate and a second side. A ring and a plurality of substrate support pads project from the first side. The ring is disposed proximate the perimeter of the substrate support. A fluid passage is disposed through the substrate support and is coupled to a well disposed in the first side. A plurality of gas flow channels are disposed in the first side and orientated radially outward from the well to a perimeter channel disposed radially inward and adjacent to the ring.
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Citations
24 Claims
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1. A substrate support for supporting a substrate in a process chamber, comprising:
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a body having a first side and a second side bounded by a perimeter;
a ring extending from the first side proximate the perimeter;
a perimeter channel disposed in the first side adjacent to and radially inward of the ring;
a plurality of substrate support pads extending from the first side;
a well disposed in the first side of the body;
a fluid passage having a diameter smaller than a diameter of the well disposed through the body and coupled to the well, the passage adapted to provide backside gas to the first side; and
a plurality of gas flow channels disposed in the first side radially outwards from the well and fluidly coupled to the perimeter channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A substrate support for supporting a substrate in a process chamber, comprising:
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a ceramic body having a first side and a second side bounded by a perimeter;
one or more electrodes disposed within the ceramic body;
a ring integrally extending from the first side proximate the perimeter;
a plurality of substrate support pads integrally extending from the first side;
a well disposed in the first side of the body;
a fluid passage having a diameter smaller than a diameter of the well disposed through the body and coupled to the well, the passage adapted to provide backside gas to the first side;
a perimeter channel disposed in the first side proximate the ring; and
a plurality of gas flow channels disposed in the first side fluidly coupling the perimeter channel and the well. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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22. A substrate support for supporting a substrate in a semiconductor process chamber comprising:
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a ceramic body having a first side and a second side bounded by a perimeter;
a ring extending from the first side proximate the perimeter;
a perimeter channel disposed in the first side adjacent to and radially inward of the ring;
a plurality of substrate support pads integrally extending from the first side;
a well disposed in the first side of the body;
a fluid passage having a diameter smaller than a diameter of the well disposed through the body and coupled to the well, the passage adapted to provide backside gas to the first side; and
a plurality of gas flow channels disposed in the first side fluidly coupling the perimeter channel and the well, the fluid channels having a depth of at least 300 μ
m.- View Dependent Claims (23, 24)
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Specification