Method of forming channel in thin film transistor using non-ionic excited species
First Claim
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1. A method of producing a bottom gate thin film transistor, comprising:
- forming a gate electrode on an insulating substrate;
forming a gate insulating film over the gate electrode;
forming a first semiconductor thin film having a channel therein over the gate insulating film;
forming a second semiconductor thin film for a source and a drain over the first semiconductor thin film;
forming the stacked layers of the first semiconductor thin film and the second semiconductor thin film into an island;
subsequent to said forming stacked layers into an island, depositing a source/drain electrode metal over the stacked layers of the first semiconductor thin film and the second semiconductor thin film;
etching a region of the deposited source/drain electrode metal, the region being located above the channel, in the depth direction to expose the second semiconductor thin film, whereby a source electrode and a drain electrode are formed; and
etching away the exposed portion of the second semiconductor thin film in the depth direction with the use of a non-ionic excited species to form a channel, the non-ionic excited species being generated by bringing molecules of a chemical substance into contact with a metal heated by electric resistance heating to decompose the molecules of the chemical substance.
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Abstract
In the production of channel etch type bottom gate thin film transistors, etching damage in a channel etch step is prevented to improve the transistor performance. The channel etch is performed using non-ionic excited species, such as hydrogen radicals and fluorine radicals, generated by contact-decomposition reaction which utilizes a metal heated by electric resistance heating. Alternatively, in place of the channel etch, a portion of the source/drain semiconductor thin film immediately above the channel is nitrided by a non-ionic nitrogen-containing decomposition product that is produced by contacting molecules of a chemical substance containing nitrogen atoms with a metal heated by electric resistance heating to decompose the chemical molecules.
12 Citations
16 Claims
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1. A method of producing a bottom gate thin film transistor, comprising:
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forming a gate electrode on an insulating substrate;
forming a gate insulating film over the gate electrode;
forming a first semiconductor thin film having a channel therein over the gate insulating film;
forming a second semiconductor thin film for a source and a drain over the first semiconductor thin film;
forming the stacked layers of the first semiconductor thin film and the second semiconductor thin film into an island;
subsequent to said forming stacked layers into an island, depositing a source/drain electrode metal over the stacked layers of the first semiconductor thin film and the second semiconductor thin film;
etching a region of the deposited source/drain electrode metal, the region being located above the channel, in the depth direction to expose the second semiconductor thin film, whereby a source electrode and a drain electrode are formed; and
etching away the exposed portion of the second semiconductor thin film in the depth direction with the use of a non-ionic excited species to form a channel, the non-ionic excited species being generated by bringing molecules of a chemical substance into contact with a metal heated by electric resistance heating to decompose the molecules of the chemical substance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of producing a bottom gate thin film transistor, comprising:
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forming a gate electrode on an insulating substrate;
forming a gate insulating film over the gate electrode;
forming a first semiconductor thin film having a channel therein over the gate insulating film;
forming a second semiconductor thin film for a source and a drain over the first semiconductor thin film;
forming the stacked layers of the first semiconductor thin film and the second semiconductor thin film into an island;
subsequent to said forming stacked layers, depositing a source/drain electrode metal over the stacked layers;
etching a region of the deposited source/drain electrode metal, the region being located above the channel, in the depth direction to expose the second semiconductor thin film, whereby a source electrode and a drain electrode are formed; and
nitriding the exposed portion of the second semiconductor thin film to form a channel using a non-ionic nitrogen-containing decomposition product that is generated by bringing a metal heated by electric resistance heating into contact with molecules of the chemical substance containing nitrogen atoms. - View Dependent Claims (13, 14, 15, 16)
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Current AssigneeMatsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
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Original AssigneeMatsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
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InventorsSakai, Masahiro, Terauchi, Masaharu
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Primary Examiner(s)Nelms, David
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Assistant Examiner(s)Le, Thao P
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Application NumberUS09/986,269Publication NumberTime in Patent Office474 DaysField of Search438/197, 438/689, 438/726, 438/774, 438/775US Class Current438/689CPC Class CodesG02F 1/1368 in which the switching elem...H01L 21/3211 Nitridation of silicon-cont...H01L 21/32135 by vapour etching onlyH01L 21/67069 for drying etchingH01L 29/66765 Lateral single gate single ...H10K 59/12 Active-matrix OLED [AMOLED]...H10K 71/50 Forming devices by joining ...
