Light emitting diode and method for making the same

• US 6,593,011 B2
• Filed: 07/24/2001
• Issued: 07/15/2003
• Est. Priority Date: 06/27/2001
• Status: Expired due to Term

• Current Assignee: Lite-On Technology Corporation
• Original Assignee: Lite On Electronics Inc (Lite-On Technology Corporation)
• Inventors: Hsing, Michael, Wang, Chien-Yuan, Liu, Ru-Shi, Chan, Ting-Shan, Su, Jeffrey
• Primary Examiner(s): Kelly, Cynthia H.
• Assistant Examiner(s): GARRETT, DAWN L
• Application Number:
  US09/910,891
• Publication Number:
  US 20030099859A1
• Time in Patent Office: 721 Days
• Field of Search: 428/690, 428/917, 313/506, 313/509, 252/301.4 R, 427/66
• US Class Current: 428/690
• CPC Class Codes: C09K 11/02 Use of particular materials as binders, particle coatings or suspension media therefor
• CPC Class Codes: C09K 11/7706 Aluminates
• CPC Class Codes: Y10S 428/917 Electroluminescent
• CPC Class Codes: Y10T 428/2991 Coated
• CPC Class Codes: Y10T 428/2995 Silane, siloxane or silicone coating

Abstract

A light emitting diode and a method for making the same are proposed. The LED comprises an inorganic phosphor, a silicon compound and an organic glue. The silicon compound has one side being completely or partially C1-C6 alkyl oxide reacted with the inorganic phosphor to modify the surface property of the inorganic phosphor and another side being a functional group selected from a group consisting of epoxy, C1-C6 alkyl, phenyl, amino. The inorganic phosphor with modified surface property can be uniformly mixed in the glue and less deposition is produced.

Claims

1. A light emitting diode, comprising:

an inorganic phosphor;

a silicon compound having one side being at least partially C1-C6 alkyl oxide reacted with the inorganic phosphor to modify the surface property of the inorganic phosphor, and another side including a functional group selected from a group consisting of epoxy, C1-C6 alkyl, phenyl, and amino; and

an organic glue reacted with the functional group;

the phosphor and the silicon compound forming an ultrasonically induced chemical bond one with the other;

whereby the inorganic phosphor with modified surface property can be uniformly combined with the glue.

2. The light emitting diode as in claim 1, wherein the inorganic phosphor can be selected from the group consisting of YAG (yttrium aluminum garnet), an oxide, a sulfide, and a phosphate.

3. The light emitting diode as in claim 1, wherein the C1-C6 alkyl oxide can be either methoxy or ethyloxy.

4. The light emitting diode as in claim 1, wherein the glue can be selected from a group consisting of epoxy resin, phenolic resin, polyurethane resin, amino resin and polyester resin.

5. A manufacturing method for light emitting diode, comprising the steps of:

(a) preparing an inorganic phosphor;

(b) mixing the inorganic phosphor with a silicon compound in an alcoholic solution to form a mixed solution;

(c) ultrasonically shocking and thereafter heating the mixed solution, the inorganic phosphor being responsively reacted with a silicon alkyl oxide to form a surface modified phosphor;

(d) mixing the surface modified phosphor with an organic glue, the phosphor being thereby uniformly suspended within the organic glue.

6. The manufacturing method for light emitting diode as in claim 5, wherein in step (a) the inorganic phosphor can be selected from the group consisting of YAG (yttrium aluminum garnet), an oxide, a sulfide, and a phosphate.

7. The manufacturing method for light emitting diode as in claim 5, wherein in step (b) the silicon compound has one side being at least partially C1-C6 alkyl oxide reacted with the inorganic phosphor to modify the surface property of the inorganic phosphor, and another side including a functional group selected from a group consisting of epoxy, C1-C6 alkyl, phenyl, and amino.

8. The manufacturing method for light emitting diode as in claim 7, wherein the C1-C6 alkyl oxide can be either methoxy or ethyloxy.

9. The manufacturing method for light emitting diode as in claim 5, wherein in step (c), the glue can be selected from a group consisting epoxy resin, phenolic resin, polyurethane resin, amino resin and polyester resin.

10. The manufacturing method for light emitting diode as in claim 7, wherein the inorganic phosphor is chemically bonded at the side of the silicon compound with C1-C6 alkyl oxide.