Electronic devices with nonvolatile memory cells of reduced dimensions
First Claim
1. An electronic device comprising:
- a substrate of semiconductor material;
memory cells, each including a stack on top of said substrate;
each of said stacks comprising a floating gate region of semiconductor material, an intermediate dielectric region, and a control gate region of semiconductor material; and
a protective layer extending on top of said substrate and between said stack structures, said protective layer having a height at least equal to that of said stack structures; and
word lines of conductive material extending on top of said insulating material layer;
said control gate region is physically separated from control gate regions belonging to adjacent stack structures by said protective layer;
and said word lines extend on top of said control gate regions and are in electrical contact with said control gate regions.
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Accused Products
Abstract
A process for the manufacturing of electronic devices, including memory cells, involving forming, on a substrate of semiconductor material, multilayer stacks including a floating gate region, an intermediate dielectric region, and a control gate region; forming a protective layer extending on top of the substrate and between the multilayer stacks and having a height at least equal to the multilayer stacks. The step of forming multilayer stacks includes the step of defining the control gate region on all sides so that each control gate region is completely separate from adjacent control gate regions. The protective layer isolates the multilayer stacks from each other at the sides. Word lines of metal extend above the protective layer and are in electrical contact with the gate regions.
12 Citations
5 Claims
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1. An electronic device comprising:
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a substrate of semiconductor material;
memory cells, each including a stack on top of said substrate;
each of said stacks comprising a floating gate region of semiconductor material, an intermediate dielectric region, and a control gate region of semiconductor material; and
a protective layer extending on top of said substrate and between said stack structures, said protective layer having a height at least equal to that of said stack structures; and
word lines of conductive material extending on top of said insulating material layer;
said control gate region is physically separated from control gate regions belonging to adjacent stack structures by said protective layer;
and said word lines extend on top of said control gate regions and are in electrical contact with said control gate regions. - View Dependent Claims (2, 3, 4, 5)
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Specification