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Method of forming a multilayer dielectric stack

  • US 6,627,503 B2
  • Filed: 04/30/2002
  • Issued: 09/30/2003
  • Est. Priority Date: 02/11/2000
  • Status: Expired due to Fees
First Claim
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1. A method of forming a dielectric stack comprising the steps of:

  • a) forming a first dielectric layer on an upper surface of a semiconductor substrate, wherein the first dielectric layer comprises a first dielectric material, which is HfO2;

    b) forming a second dielectric layer on the first dielectric layer, wherein the second dielectric layer is selected from the group consisting of Al2O3, AlN, SiN, and Si3N4; and

    c) forming a third dielectric layer above the second dielectric layer, wherein the third dielectric layer comprises the same dielectric material as the first dielectric material.

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