Method of forming crystalline semiconductor thin film on base substrate, lamination formed with crystalline semiconductor thin film and color filter
First Claim
Patent Images
1. A method of forming a crystalline semiconductor thin film on a base material, comprising:
- applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature of the thin film at not less than 25°
C. and not more than 300°
C. in a vacuum or a reducing gas atmosphere.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of forming a crystalline semiconductor thin film on a base material which can be prepared at a low temperature by simple step and device, the method including a processing step of applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature at not less than 25° C. and not more than 300° C. in a vacuum or a reducing gas atmosphere, as well as a substrate having the semiconductor thin film provided on the base material, a substrate for forming a color filter and a color filter using the substrate.
-
Citations
13 Claims
-
1. A method of forming a crystalline semiconductor thin film on a base material, comprising:
- applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature of the thin film at not less than 25°
C. and not more than 300°
C. in a vacuum or a reducing gas atmosphere. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
- applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature of the thin film at not less than 25°
-
11. A method of applying UV-rays to an amorphous metal oxide thin film disposed on a base material under a reduced pressure or in a reducing gas atmosphere, and with a temperature of the thin film maintained at not more than 300°
- C. thereby changing the amorphous metal oxide into a crystalline metal oxide thin film.
- View Dependent Claims (12, 13)
Specification