Method of forming crystalline semiconductor thin film on base substrate, lamination formed with crystalline semiconductor thin film and color filter

• US 6,680,242 B2
• Filed: 10/17/2001
• Issued: 01/20/2004
• Est. Priority Date: 03/19/2001
• Status: Expired due to Term

• Current Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation)
• Inventors: Shimizu, Keishi, Yatsuda, Kazutoshi, Ohtsu, Shigemi, Akutsu, Eiichi
• Primary Examiner(s): Whitehead, Jr., Carl
• Assistant Examiner(s): Hogans, David L.
• Application Number:
  US09/977,947
• Publication Number:
  US 20020132454A1
• Time in Patent Office: 825 Days
• Field of Search: 438/166, 438/308, 438/486, 438/487, 438/535, 438/795, 428/412, 428/457, 428/458
• US Class Current: 438/487
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium
• CPC Class Codes: C23C 14/58 After-treatment
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/02686 Pulsed laser beam

Abstract

A method of forming a crystalline semiconductor thin film on a base material which can be prepared at a low temperature by simple step and device, the method including a processing step of applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature at not less than 25° C. and not more than 300° C. in a vacuum or a reducing gas atmosphere, as well as a substrate having the semiconductor thin film provided on the base material, a substrate for forming a color filter and a color filter using the substrate.

Claims

1. A method of forming a crystalline semiconductor thin film on a base material, comprising:

applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature of the thin film at not less than 25°

C. and not more than 300°

C. in a vacuum or a reducing gas atmosphere.

2. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the reducing gas atmosphere contains a hydrogen gas.

3. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the UV-rays are light from an excimer lamp.

4. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the kept temperature is within a temperature range from 50°

C. to 250°

C.

5. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the base material is a plastic base material and the kept temperature is within a temperature range, from 50°

C. to a heat resistant temperature of the plastic base material.

6. The method of forming a crystalline semiconductor thin film on a base material according to claim 5, wherein the heat resistant temperature of the plastic base material is from 100 to 230°

C.

7. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the amorphous semiconductor thin film is an oxide semiconductor thin film.

8. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the amorphous semiconductor thin film is a titanium oxide thin film formed by a sputtering method.

9. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the crystalline semiconductor thin film is an anatase type titanium oxide thin film or a thin film comprising mixed crystals of anatase type titanium dioxide and rutile type titanium dioxide.

10. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein a transparent conductive thin film is disposed between the base material and the amorphous semiconductor thin film.

11. A method of applying UV-rays to an amorphous metal oxide thin film disposed on a base material under a reduced pressure or in a reducing gas atmosphere, and with a temperature of the thin film maintained at not more than 300°

C. thereby changing the amorphous metal oxide into a crystalline metal oxide thin film.

12. The method according to claim 11, wherein UV-rays are irradiated uniformly on the thin film.

13. The method according to claim 11, wherein, when the temperature is kept at a first temperature value, changing the amorphous metal oxide into a crystalline metal oxide thin film needs a first amount of time of irradiation of the UV-rays, the method further comprising:

keeping the temperature at a second temperature value to change the amorphous metal oxide into a crystalline metal oxide thin film within a second amount of time of irradiation of the UV-rays, wherein the second temperature value is higher than the first temperature value, and the second amount of time is less than the first amount of time.