POWER SEMICONDUCTOR SWITCHING DEVICES, POWER CONVERTERS, INTEGRATED CIRCUIT ASSEMBLIES, INTEGRATED CIRCUITRY, POWER CURRENT SWITCHING METHODS, METHODS OF FORMING A POWER SEMICONDUCTOR SWITCHING DEVICE, POWER CONVERSION METHODS, POWER SEMICONDUCTOR SWITCHING DEVICE PACKAGING METHODS, AND METHODS OF FORMING A POWER TRANSISTOR

• US 6,737,301 B2
• Filed: 07/12/2001
• Issued: 05/18/2004
• Est. Priority Date: 07/13/2000
• Status: Expired due to Term

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Isothermal Systems Research Inc.
• Inventors: Smetana, Bruce A., Eden, Richard C.
• Primary Examiner(s): Thompson, Craig
• Application Number:
  US09/904,575
• Publication Number:
  US 20020093062A1
• Time in Patent Office: 1,041 Days
• Field of Search: 438/128, 438/107-108, 438/142, 438/197, 438/200
• US Class Current: 438/128
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 23/4824 Pads with extended contours, e.g. grid structure, branch structure, finger structure
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/642 Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 24/17 of a plurality of bump connectors
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/41725 Source or drain electrodes for field effect devices with monocrystalline semiconductor on source/drain region H01L29/0843
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/0101 : Neon [Ne]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01037 : Rubidium [Rb]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01043 : Technetium [Tc]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/01094 : Plutonium [Pu]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/15151 : the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H02M 3/33507 : with automatic control of the output voltage or current, e.g. flyback converters H02M3/33561, H02M3/33569 take precedence
• CPC Class Codes: H02M 3/33576 : having at least one active switching element at the secondary side of an isolation transformer
• CPC Class Codes: H02M 3/33592 : having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
• CPC Class Codes: Y02B 70/10 : Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor are described. One exemplary aspect provides a power semiconductor device including a semiconductive substrate having a surface; and a power transistor having a planar configuration and comprising a plurality of electrically coupled sources and a plurality of electrically coupled drains formed using the semiconductive substrate and adjacent the surface.

Claims

1. A method of forming a power semiconductor switching device configured to conduct power currents comprising:

forming at least one thousand planar field effect transistors individually having a source, a drain and a gate adjacent to a common surface of a semiconductive substrate;

electrically coupling the sources of the field effect transistors;

electrically coupling the drains of the field effect transistors;

electrically coupling the gates of the field effect transistors; and

forming body diode circuitry intermediate the electrically coupled sources and the electrically coupled drains.

2. The method of claim 1 wherein the electrical couplings comprises coupling respective ones of the sources, the drains and the gates in parallel.

3. The method of claim 1 further comprising forming the field effect transistors using a flip chip semiconductive die.

4. The method of claim 1 wherein the forming the body diode circuitry comprises forming circuitry configured as an n-channel field effect transistor having a gate and a source electrically coupled.

5. The method of claim 1 wherein the forming the body diode circuitry comprises forming circuitry configured as a p-channel field effect transistor.

6. The method of claim 1 further comprising forming a bypass capacitor intermediate the electrically coupled sources and a supply terminal of a voltage source.

7. The method of claim 1 further comprising forming a bypass capacitor configured to charge a gate capacitance of a plurality of electrically coupled gates of the power transistor.

8. The method of claim 1 further comprising forming a plurality metallization layers above the common surface, and wherein the electrically couplings individually comprise electrical coupling using the metallization layers.

9. The method of claim 8 further comprising forming at least one horizontal interconnect layer upon and coupled with respective portions of the metallization layers.

10. The method of claim 8 wherein the forming comprises forming the at least one thousand planar field effect transistors to comprise MOSFET devices.

13. The method of claim 1 wherein the body diode circuitry is configured to conduct free-wheeling currents intermediate the electrically coupled sources and the electrically coupled drains.

14. The method of claim 1 wherein the body diode circuitry is coupled in parallel with the at least one thousand planar field effect transistors.

15. The method of claim 1 wherein the body diode circuitry comprises an active diode connected field effect transistor.

16. The method of claim 15 wherein the active diode field effect transistor comprises a p-channel device having a gate of the p-channel device electrically coupled with a drain of the p-channel device.

11. A method of forming a power semiconductor switching device comprising:

forming a plurality of planar submicron MOSFET devices;

coupling the planar submicron MOSFET devices in parallel to collectively conduct power currents in excess of one Ampere; and

configuring a bypass capacitor to charge a gate capacitance of a plurality of gates of the planar submicron MOSFET devices.

17. The method of claim 11 wherein the configuring comprises coupling the bypass capacitor intermediate a supply terminal of a voltage source and a common node coupling the sources of the planar submicron MOSFET devices.

18. The method of claim 11 wherein the forming comprises forming the planar submicron MOSFET devices using a substrate, and the configuring comprises forming the bypass capacitor using the substrate.

19. The method of claim 11 further comprising coupling body diode circuitry intermediate commonly-coupled sources and commonly-coupled drains of the parallel coupled planar submicron MOSFET devices.

12. A method of forming a power semiconductor switching device comprising:

providing a semiconductor die in a flip chip configuration;

coupling a plurality of planar field effect transistors of the semiconductor die in parallel to enable conduction of power currents in excess of one Ampere; and

coupling a plurality of electrically coupled sources of the parallel coupled planar field effect transistors with a supply terminal of a voltage source using a bypass capacitor.

20. The method of claim 12 further comprising configuring the bypass capacitor to charge a gate capacitance of a plurality of gates of the planar field effect transistors.

21. The method of claim 12 further comprising:

providing the planar field effect transistors using a substrate of the semiconductor die; and

forming the bypass capacitor using the substrate.

22. The method of claim 12 further comprising coupling body diode circuitry intermediate the sources and commonly-coupled drains of the parallel coupled planar field effect transistors.