POWER SEMICONDUCTOR SWITCHING DEVICES, POWER CONVERTERS, INTEGRATED CIRCUIT ASSEMBLIES, INTEGRATED CIRCUITRY, POWER CURRENT SWITCHING METHODS, METHODS OF FORMING A POWER SEMICONDUCTOR SWITCHING DEVICE, POWER CONVERSION METHODS, POWER SEMICONDUCTOR SWITCHING DEVICE PACKAGING METHODS, AND METHODS OF FORMING A POWER TRANSISTOR
DCFirst Claim
1. A method of forming a power semiconductor switching device configured to conduct power currents comprising:
- forming at least one thousand planar field effect transistors individually having a source, a drain and a gate adjacent to a common surface of a semiconductive substrate;
electrically coupling the sources of the field effect transistors;
electrically coupling the drains of the field effect transistors;
electrically coupling the gates of the field effect transistors; and
forming body diode circuitry intermediate the electrically coupled sources and the electrically coupled drains.
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Abstract
Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor are described. One exemplary aspect provides a power semiconductor device including a semiconductive substrate having a surface; and a power transistor having a planar configuration and comprising a plurality of electrically coupled sources and a plurality of electrically coupled drains formed using the semiconductive substrate and adjacent the surface.
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Citations
22 Claims
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1. A method of forming a power semiconductor switching device configured to conduct power currents comprising:
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forming at least one thousand planar field effect transistors individually having a source, a drain and a gate adjacent to a common surface of a semiconductive substrate;
electrically coupling the sources of the field effect transistors;
electrically coupling the drains of the field effect transistors;
electrically coupling the gates of the field effect transistors; and
forming body diode circuitry intermediate the electrically coupled sources and the electrically coupled drains. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 13, 14, 15, 16)
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11. A method of forming a power semiconductor switching device comprising:
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forming a plurality of planar submicron MOSFET devices;
coupling the planar submicron MOSFET devices in parallel to collectively conduct power currents in excess of one Ampere; and
configuring a bypass capacitor to charge a gate capacitance of a plurality of gates of the planar submicron MOSFET devices. - View Dependent Claims (17, 18, 19)
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12. A method of forming a power semiconductor switching device comprising:
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providing a semiconductor die in a flip chip configuration;
coupling a plurality of planar field effect transistors of the semiconductor die in parallel to enable conduction of power currents in excess of one Ampere; and
coupling a plurality of electrically coupled sources of the parallel coupled planar field effect transistors with a supply terminal of a voltage source using a bypass capacitor. - View Dependent Claims (20, 21, 22)
providing the planar field effect transistors using a substrate of the semiconductor die; and
forming the bypass capacitor using the substrate.
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22. The method of claim 12 further comprising coupling body diode circuitry intermediate the sources and commonly-coupled drains of the parallel coupled planar field effect transistors.
Specification