Low contamination plasma chamber components and methods for making the same
First Claim
1. A component of a plasma etch reactor, the component being selected from the group consisting of a plasma confinement ring, a focus ring, a pedestal, a chamber wall, a chamber liner and a gas distribution plate, the component having one or more surfaces exposed to the plasma during processing, the component comprising an as-sprayed plasma sprayed coating on a plasma exposed surface of the component, the coating being a ceramic material selected from the group consisting of, yttria, zirconia, silicon carbide, silicon nitride, boron carbide and boron nitride, and the coating having an as-sprayed surface roughness that promotes the adhesion of polymer deposits formed during etching of semiconductor substrates in the plasma etch reactor.
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Accused Products
Abstract
Components for use in plasma processing chambers having plasma exposed surfaces with surface roughness characteristics that promote polymer adhesion. The roughened surfaces are formed by plasma spraying a coating material such as a ceramic or high temperature polymer onto the surface of the component. The plasma sprayed components of the present invention can be used for plasma reactor components having surfaces exposed to the plasma during processing. Suitable components include chamber walls, chamber liners, baffle rings, gas distribution plates, plasma confinement rings, and liner supports. By improving polymer adhesion, the plasma sprayed component surfaces can reduce the levels of particle contamination in the process chamber thereby improving yields and reducing down-time required for cleaning and/or replacing chamber components.
158 Citations
21 Claims
- 1. A component of a plasma etch reactor, the component being selected from the group consisting of a plasma confinement ring, a focus ring, a pedestal, a chamber wall, a chamber liner and a gas distribution plate, the component having one or more surfaces exposed to the plasma during processing, the component comprising an as-sprayed plasma sprayed coating on a plasma exposed surface of the component, the coating being a ceramic material selected from the group consisting of, yttria, zirconia, silicon carbide, silicon nitride, boron carbide and boron nitride, and the coating having an as-sprayed surface roughness that promotes the adhesion of polymer deposits formed during etching of semiconductor substrates in the plasma etch reactor.
- 12. A component of a plasma etch reactor, the component comprising aluminum having an anodized or non-anodized plasma exposed surface, the component comprising an as-sprayed plasma sprayed coating on a plasma exposed surface of the component, the coating being a ceramic material selected from the group consisting of, yttria, zirconia, silicon carbide, silicon nitride, boron carbide and boron nitride, and the coating having an as-sprayed surface roughness that promotes the adhesion of polymer deposits formed during etching of semiconductor substrates in the plasma etch reactor.
- 15. A component of a plasma etch reactor, the component being made from a ceramic material selected from the group consisting of alumina, yttria, zirconia, silicon carbide, silicon nitride, boron carbide and boron nitride, the component having one or more surfaces exposed to the plasma during processing, the component comprising an as-sprayed plasma sprayed coating on a plasma exposed surface of the component, the coating being a ceramic material selected from the group consisting of, yttria, zirconia, silicon carbide, silicon nitride, boron carbide and boron nitride, and the coating having an as-sprayed surface roughness that promotes the adhesion of polymer deposits formed during etching of semiconductor substrates in the plasma etch reactor.
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17. A component of a plasma etch reactor, the component having one or more surfaces exposed to the plasma during processing, the component comprising an as-sprayed plasma sprayed coating on a plasma exposed surface of the component, the component and the coating both comprising the same ceramic material selected from the group consisting of yttria, zirconia, silicon carbide, silicon nitride, boron carbide and boron nitride, and the coating having an as-sprayed surface roughness that promotes the adhesion of polymer deposits formed during etching of semiconductor substrates in the plasma etch reactor.
- 18. A component of a plasma reactor, the component having one or more surfaces exposed to the plasma during processing, the component comprising an as-sprayed plasma sprayed polyimide coating on a plasma exposed surface of the component, wherein the coating has an as-sprayed surface roughness that promotes the adhesion of polymer deposits.
- 20. A component of a plasma etch reactor, the component having one or more surfaces exposed to the plasma during processing, the component comprising a coating formed by a process consisting essentially of plasma spraying a coating material on a plasma exposed surface of the component that has not been roughened, the coating being a ceramic material comprising at least one material selected from the group consisting of yttria, zirconia, silicon carbide and boron carbide, the coating having an as-sprayed surface roughness that promotes the adhesion of polymer deposits formed during etching of semiconductor substrates in the plasma etch reactor.
Specification