Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
First Claim
1. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising, in order:
- depositing a first portion of the silica glass film over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium, but substantially no molecular hydrogen; and
thereafter, depositing a second portion of the silica glass film over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.
-
Citations
21 Claims
-
1. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising, in order:
-
depositing a first portion of the silica glass film over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium, but substantially no molecular hydrogen; and
thereafter, depositing a second portion of the silica glass film over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising, in order:
-
depositing a first portion of the silica glass film over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and molecular hydrogen, wherein the first portion of the silica glass film is deposited at a first D/S ratio; and
thereafter, depositing a second portion of the silica glass film over the first portion as deposited and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and, wherein the second portion of the silica glass layer is deposited at a second D/S ratio less than the first ratio. - View Dependent Claims (9, 10, 11, 12, 13, 14)
-
-
15. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising, in order:
-
depositing a first portion of the silica glass film over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and a first fluent gas; and
thereafter, depositing a second portion of the silica glass film over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and a second fluent gas, wherein an average molecular mass of the second fluent gas is less than an average molecular mass of the first fluent gas.
-
-
16. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising:
-
flowing a process gas comprising a silicon source, an oxygen source, helium and molecular hydrogen into the chamber; and
forming a plasma having an ion density of at least 1×
1011 ions/cm3 from said process gas to deposit said silicon oxide layer over said substrate in a process that has simultaneous deposition and sputtering components;
wherein during deposition of the silicon oxide layer a ratio of a flow rate of helium to molecular hydrogen is decreased.- View Dependent Claims (17, 18, 19, 20, 21)
-
Specification