Method for producing organic electronic devices on deposited dielectric materials

• US 6,869,821 B2
• Filed: 12/30/2002
• Issued: 03/22/2005
• Est. Priority Date: 12/30/2002
• Status: Expired due to Fees

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Knipp, Dietmar P., Street, Robert A., Northrup, John E.
• Primary Examiner(s): KIELIN, ERIK J
• Application Number:
  US10/335,598
• Publication Number:
  US 20040124416A1
• Time in Patent Office: 813 Days
• Field of Search: 438/99, 257/40
• US Class Current: 438/99
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/3145 formed by deposition from a gas or vapour
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/472 the gate dielectric comprising only inorganic materials

Abstract

A deposited dielectric (e.g., PECVD silicon nitride) formed on an inexpensive glass or plastic foil substrate is modified to facilitate the formation of high mobility organic semiconductor films. In one embodiment, the dielectric is plasma treated using nitrogen or argon gas to reduce the surface roughness of the dielectric layer below 5 nm (peak-to-valley). An organic semiconductor film (e.g., pentacene) grown on the modified dielectric exhibits high mobility and large polycrystalline grain sizes.

Claims

1. A method for fabricating an organic electronic device comprising:

depositing a dielectric material over a substrate;

plasma treating the dielectric material; and

depositing an organic semiconductor film over the plasma treated dielectric material,

wherein plasma treating the dielectric material comprises utilizing a gas selected from the group consisting of Nitrogen (N₂) and Argon (Ar), and

wherein plasma treating the dielectric material comprises placing the substrate in a reactor chamber maintained in a range 200 to 500 mTorr, and flowing the gas at a rate in the range of 100-200 sccm.

2. The method according to claim 1, wherein depositing the dielectric material comprises depositing one of silicon oxide, silicon nitride, and silicon oxy-nitride using a Plasma Enhanced Chemical Vapor Deposition process.

3. The method according to claim 1, further comprising forming a gate structure before depositing the dielectric material, and forming source/drain structures after depositing the organic semiconductor film.

4. The method according to claim 1, further comprising chemically treating an upper surface of the dielectric material before depositing the organic semiconductor film.

6. The method according to claim 1, wherein the organic semiconductor film comprises a polyacene.

7. The method according to claim 6, wherein the organic semiconductor film comprises pentacene.

8. The method according to claim 1, further comprising forming a gate structure before depositing the dielectric material, and forming source/drain structures on the dielectric material before depositing the organic semiconductor film.

5. A method for fabricating an organic electronic device comprising:

depositing a dielectric material over a substrate;

plasma treating the dielectric material; and

depositing an organic semiconductor film over the plasma treated dielectric material,

wherein plasma treating the dielectric material comprises utilizing a gas selected from the group consisting of Nitrogen (N₂) and Argon (Ar), and

wherein plasma treating further comprises sustaining a plasma until the dielectric material has a peak-to-valley surface roughness of less than 5 nm.

9. A method for fabricating an organic electronic device comprising:

depositing a dielectric material over a substrate;

plasma treating the dielectric material; and

depositing an organic semiconductor film over the plasma treated dielectric material,

wherein plasma treating comprises sustaining a plasma until the dielectric material has a peak-to-valley surface roughness of less than 5 nm.

10. The method according to claim 9, wherein depositing the dielectric material comprises depositing one of silicon oxide, silicon nitride, and silicon oxy-nitride using a Plasma Enhanced Chemical Vapor Deposition process.

11. The method according to claim 9, wherein plasma treating the dielectric material comprises utilizing a gas selected from the group consisting of Nitrogen (N₂) and Argon (Ar).

12. The method according to claim 11, wherein plasma treating the dielectric material comprises placing the substrate in a reactor chamber maintained in a range of 200 to 500 mTorr, flowing the gas at a rate in the range of 100-200 sccm.

13. The method according to claim 9, wherein the organic semiconductor film comprises a polyacene.

14. The method according to claim 13, wherein the organic semiconductor film comprises pentacene.

15. The method according to claim 9, further comprising forming a gate structure before depositing the dielectric material, and forming source/drain structures on the dielectric material before depositing the organic semiconductor film.

16. The method according to claim 9, further comprising forming a gate structure before depositing the dielectric material, and forming source/drain structures after depositing the organic semiconductor film.

17. The method according to claim 9, further comprising chemically treating an upper surface of the dielectric material before depositing the organic semiconductor film.